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Juan Qin(秦娟), Gang Cao(曹港), Run Xu(徐闰), Jing Lin(林婧), Hua Meng(孟华), Wen-Zhen Wang(王文贞), Zi-Ye Hong(洪子叶), Jian-Cong Cai(蔡健聪), and Dong-Mei Li(李冬梅). Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique[J]. 中国物理B, 2022, 31(11): 117102-117102. |
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Can Li(李灿), Hongyu Xu(徐宏宇), Chongyang Zhi(郅冲阳), Zhi Wan(万志), and Zhen Li(李祯). TiO2/SnO2 electron transport double layers with ultrathin SnO2 for efficient planar perovskite solar cells[J]. 中国物理B, 2022, 31(11): 118802-118802. |
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Fang-Qi Lin(林芳祁), Nong Li(李农), Wen-Guang Zhou(周文广), Jun-Kai Jiang(蒋俊锴), Fa-Ran Chang(常发冉), Yong Li(李勇), Su-Ning Cui(崔素宁), Wei-Qiang Chen(陈伟强), Dong-Wei Jiang(蒋洞微), Hong-Yue Hao(郝宏玥), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), and Zhi-Chuan Niu(牛智川). Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy[J]. 中国物理B, 2022, 31(9): 98504-098504. |
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Haotian Jiang(蒋浩天), Xing Xu(徐兴), Chao Fan(樊超), Beibei Dai(代贝贝), Zhuodong Qi(亓卓栋), Sha Jiang(蒋莎), Mengqiu Cai(蔡孟秋), and Qinglin Zhang(张清林). Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse[J]. 中国物理B, 2022, 31(4): 48102-048102. |
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Li-Jia Chen(陈丽佳), Guo-Xi Niu(牛国玺), Lian-Bin Niu(牛连斌), and Qun-Liang Song(宋群梁). Effect of net carriers at the interconnection layer in tandem organic solar cells[J]. 中国物理B, 2022, 31(3): 38802-038802. |
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Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Enhanced absorption process in the thin active region of GaAs based p-i-n structure[J]. 中国物理B, 2021, 30(9): 97803-097803. |
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Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智). A comparative study on radiation reliability of composite channel InP high electron mobility transistors[J]. 中国物理B, 2021, 30(7): 70702-070702. |
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Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟), and Xiao-Hui Zhao(赵晓辉). In-plane oriented CH3NH3PbI3 nanowire suppression of the interface electron transfer to PCBM[J]. 中国物理B, 2021, 30(6): 66801-066801. |
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尹蕾, 皮孝东, 杨德仁. Silicon-based optoelectronic synaptic devices[J]. 中国物理B, 2020, 29(7): 70703-070703. |
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洪浩, 程阳, 吴春春, 黄琛, 刘灿, 于文韬, 周旭, 马超杰, 王金焕, 张智宏, 赵芸, 熊杰, 刘开辉. Modulation of carrier lifetime in MoS2 monolayer by uniaxial strain[J]. 中国物理B, 2020, 29(7): 77201-077201. |
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张璇, 贾庆轩, 孙矩, 蒋洞微, 王国伟, 徐应强, 牛智川. High-performance midwavelength infrared detectors based on InAsSb nBn design[J]. 中国物理B, 2020, 29(6): 68501-068501. |
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崔素宁, 蒋洞微, 孙矩, 贾庆轩, 李农, 张璇, 李勇, 常发冉, 王国伟, 徐应强, 牛智川. Investigation of active-region doping on InAs/GaSb long wave infrared detectors[J]. 中国物理B, 2020, 29(4): 48502-048502. |
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郭玉, 查钢强, 李颖锐, 谭婷婷, 朱昊, 吴森. Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor[J]. 中国物理B, 2019, 28(11): 117201-117201. |
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张文婷, 王粉霞, 李玉苗, 郭小星, 杨建红. Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer[J]. 中国物理B, 2019, 28(8): 86801-086801. |
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徐阳, 陈选虎, 程亮, 任芳芳, 周建军, 柏松, 陆海, 顾书林, 张荣, 郑有炓, 叶建东. High performance lateral Schottky diodes based on quasi-degenerated Ga2O3[J]. 中国物理B, 2019, 28(3): 38503-038503. |