摘要： The GaInAsSb as one of the most important semiconductor alloy systems for infrar ed detectors is well established. Samples of GaInAsSb alloys have been grown by atmospheric pressure metalorganic chemical vapor deposition on n-GaSb (Te-doped ) substrates. The properties of GaInAsSb layers were characterized by single-crystal X-ray diffraction, doublecrystal X-ray rocking curve and scanning elec tron acoustic microscopy. The spectral responses of p⁺-GaInAsSb/p-GaInAsSb/n-GaSb detectors showed cut-off wavelength at 2.4μm,detectivity D=1.2×10⁹ cmHz^0.05/W at room temperature,and quantum efficiency 40%.

Abstract: The GaInAsSb as one of the most important semiconductor alloy systems for infrar ed detectors is well established. Samples of GaInAsSb alloys have been grown by atmospheric pressure metalorganic chemical vapor deposition on n-GaSb (Te-doped ) substrates. The properties of GaInAsSb layers were characterized by single-crystal X-ray diffraction, doublecrystal X-ray rocking curve and scanning elec tron acoustic microscopy. The spectral responses of p⁺-GaInAsSb/p-GaInAsSb/n-GaSb detectors showed cut-off wavelength at 2.4μm,detectivity D=1.2×10⁹ cmHz^0.05/W at room temperature,and quantum efficiency 40%.

中图分类号:  (Nucleation and growth)

• 68.55.A-

07.57.Kp (Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 72.80.Ey (III-V and II-VI semiconductors) 61.05.cp (X-ray diffraction) 07.78.+s (Electron, positron, and ion microscopes; electron diffractometers)