Effect of buffer layer Bi2Te3 on anisotropic Gilbert damping of Fe/α-GeTe on Al2O3 substrate

doi:10.1088/1674-1056/ae15f6

中国物理B ›› 2026, Vol. 35 ›› Issue (6): 67601-067601.doi: 10.1088/1674-1056/ae15f6

Effect of buffer layer Bi₂Te₃ on anisotropic Gilbert damping of Fe/α-GeTe on Al₂O₃ substrate

Qing-Lin Yang(杨庆林)^1,2, Xu Yang(杨旭)^1,3, Xiang-Qun Zhang(张向群)¹, Wei He(何为)¹, and Zhao-Hua Cheng(成昭华)^1,2,3,†

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2025-08-27 修回日期:2025-09-26 接受日期:2025-10-22 发布日期:2026-06-01
通讯作者: Zhao-Hua Cheng E-mail:zhcheng@iphy.ac.cn
基金资助:
Project supported by the National Key Research Program and Development of China (Grant Nos. 2022YFA1403302 and 2024YFA1408702), the National Natural Sciences Foundation of China (Grant Nos. U22A20115 and 52031015), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 12404140), and the China Postdoctoral Science Foundation (Grant No. 2023M732518).

Effect of buffer layer Bi₂Te₃ on anisotropic Gilbert damping of Fe/α-GeTe on Al₂O₃ substrate

Qing-Lin Yang(杨庆林)^1,2, Xu Yang(杨旭)^1,3, Xiang-Qun Zhang(张向群)¹, Wei He(何为)¹, and Zhao-Hua Cheng(成昭华)^1,2,3,†

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2025-08-27 Revised:2025-09-26 Accepted:2025-10-22 Published:2026-06-01
Contact: Zhao-Hua Cheng E-mail:zhcheng@iphy.ac.cn
Supported by:
Project supported by the National Key Research Program and Development of China (Grant Nos. 2022YFA1403302 and 2024YFA1408702), the National Natural Sciences Foundation of China (Grant Nos. U22A20115 and 52031015), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 12404140), and the China Postdoctoral Science Foundation (Grant No. 2023M732518).

1. 2026-067601-SI.pdf(1351KB)

摘要/Abstract

摘要： The ${\alpha}$-GeTe is a typical ferroelectric Rashba semiconductor (FERSC) that has attracted a lot of attention in spintronics. The Fe/${\alpha}$-GeTe grown on Si substrates has anisotropic Gilbert damping. However, the effect of Al$_{2}$O$_{3}$, as another common substrate, remains unknown when ${\alpha}$-GeTe is grown on it. Here, we fabricated $\alpha $-GeTe thin films using Al$_{2}$O$_{3 }$ substrates. The ${\alpha}$-GeTe directly grown on Al$_{2}$O$_{3}$ exhibits an in-plane polycrystalline structure. A Bi$_{2}$Te$_{3}$ buffer layer can make the ${\alpha}$-GeTe exhibit a single-crystal feature. The anisotropic Gilbert damping of FM layers is present in Fe/${\alpha}$-GeTe/Bi$_{2}$Te$_{3}$/Al$_{2}$O$_{3}$ and vanished in Fe/${\alpha }$-GeTe/Al$_{2}$O$_{3}$. Our finding illustrates that ${\alpha }$-GeTe growth on Al$_{2}$O$_{3}$ with a Bi$_{2}$Te$_{3}$ buffer layer can serve as a suitable platform for anisotropic research. Our work paves the way for the application of the Al$_{2}$O$_{3}$-based ${\alpha}$-GeTe thin films in anisotropic electronics.

关键词: ferroelectric Rashba semiconductor, anisotropic Gilbert damping, buffer layer

Abstract: The ${\alpha}$-GeTe is a typical ferroelectric Rashba semiconductor (FERSC) that has attracted a lot of attention in spintronics. The Fe/${\alpha}$-GeTe grown on Si substrates has anisotropic Gilbert damping. However, the effect of Al$_{2}$O$_{3}$, as another common substrate, remains unknown when ${\alpha}$-GeTe is grown on it. Here, we fabricated $\alpha $-GeTe thin films using Al$_{2}$O$_{3 }$ substrates. The ${\alpha}$-GeTe directly grown on Al$_{2}$O$_{3}$ exhibits an in-plane polycrystalline structure. A Bi$_{2}$Te$_{3}$ buffer layer can make the ${\alpha}$-GeTe exhibit a single-crystal feature. The anisotropic Gilbert damping of FM layers is present in Fe/${\alpha}$-GeTe/Bi$_{2}$Te$_{3}$/Al$_{2}$O$_{3}$ and vanished in Fe/${\alpha }$-GeTe/Al$_{2}$O$_{3}$. Our finding illustrates that ${\alpha }$-GeTe growth on Al$_{2}$O$_{3}$ with a Bi$_{2}$Te$_{3}$ buffer layer can serve as a suitable platform for anisotropic research. Our work paves the way for the application of the Al$_{2}$O$_{3}$-based ${\alpha}$-GeTe thin films in anisotropic electronics.

Key words: ferroelectric Rashba semiconductor, anisotropic Gilbert damping, buffer layer

中图分类号: (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance)

76.50.+g

73.20.At (Surface states, band structure, electron density of states) 75.76.+j (Spin transport effects) 75.40.Gb (Dynamic properties?)

Qing-Lin Yang(杨庆林), Xu Yang(杨旭), Xiang-Qun Zhang(张向群), Wei He(何为), and Zhao-Hua Cheng(成昭华). Effect of buffer layer Bi₂Te₃ on anisotropic Gilbert damping of Fe/α-GeTe on Al₂O₃ substrate[J]. 中国物理B, 2026, 35(6): 67601-067601.

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Effect of buffer layer Bi₂Te₃ on anisotropic Gilbert damping of Fe/α-GeTe on Al₂O₃ substrate

Effect of buffer layer Bi₂Te₃ on anisotropic Gilbert damping of Fe/α-GeTe on Al₂O₃ substrate

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