中国物理B ›› 2026, Vol. 35 ›› Issue (5): 56103-056103.doi: 10.1088/1674-1056/ae067e

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A novel stack-HfO2 top-gate structure for improving performance of network carbon nanotube transistor

Bowen Zhang(张博文)1, Yimin Lei(雷毅敏)1,2,†, Jiejie Zhu(祝杰杰)1,‡, Weiwei Wang(王巍巍)2, Yuxiang Wei(魏宇翔)1, Lingjie Qin(秦灵洁)1, Mingchen Zhang(张明辰)1, Jiaxiang Xu(徐佳响)2, Hong Wang(王宏)1, Xiaohua Ma(马晓华)1, and Yue Hao(郝跃)1   

  1. 1 National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China;
    2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
  • 收稿日期:2025-07-17 修回日期:2025-09-09 接受日期:2025-09-15 发布日期:2026-05-07
  • 通讯作者: Yimin Lei, Jiejie Zhu E-mail:leiym@xidian.edu.cn;jjzhu@mail.xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62188102, 62174125, and 62274130) and the Innovation Fund of Xidian University (Grant No. YJSJ23019).

A novel stack-HfO2 top-gate structure for improving performance of network carbon nanotube transistor

Bowen Zhang(张博文)1, Yimin Lei(雷毅敏)1,2,†, Jiejie Zhu(祝杰杰)1,‡, Weiwei Wang(王巍巍)2, Yuxiang Wei(魏宇翔)1, Lingjie Qin(秦灵洁)1, Mingchen Zhang(张明辰)1, Jiaxiang Xu(徐佳响)2, Hong Wang(王宏)1, Xiaohua Ma(马晓华)1, and Yue Hao(郝跃)1   

  1. 1 National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China;
    2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
  • Received:2025-07-17 Revised:2025-09-09 Accepted:2025-09-15 Published:2026-05-07
  • Contact: Yimin Lei, Jiejie Zhu E-mail:leiym@xidian.edu.cn;jjzhu@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62188102, 62174125, and 62274130) and the Innovation Fund of Xidian University (Grant No. YJSJ23019).

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摘要： Carbon nanotubes (CNTs) are regarded as a powerful contender to replace Si transistors after Moore's law due to their advantages such as quasi-ballistic transport, high carrier mobility, and low power consumption. In the traditional CNT preparation process, CNTs are deposited on SiO$_{2}$ substrate and then the gate dielectric is deposited. In this structure, pinholes will appear between CNTs and dielectric layer, which will affect the gate-control and increase the gate leakage current. Therefore, in this paper, we designed a new stack-HfO$_{2}$ top-gate (STG) network CNTFET. By filling the pinholes between CNTs and dielectric layer, the contact interface condition is improved, reducing the subthreshold swing and improving $I_{\rm on}/I_{\rm off}$ of the device. Meanwhile, through first-principles calculations, compared with the conventional structure, the interface charge transfer value of the CNT/HfO$_{2}$ interface for STG is about 5 times smaller than that of CNT/SiO$_{2}$ interface. Specifically, the mobility and $SS$, and $I_{\rm on}/I_{\rm off}$ of the STG structure are 130 cm$^{2}$/V$\cdot$s, 156 mV/dec, and 10$^{7}$, respectively. Taking into account the above advantages, the proposed STG structure has reference value for improving the performance of CNTFET.

关键词: carbon nanotube, HfO2, gate dielectric, interface

Abstract: Carbon nanotubes (CNTs) are regarded as a powerful contender to replace Si transistors after Moore's law due to their advantages such as quasi-ballistic transport, high carrier mobility, and low power consumption. In the traditional CNT preparation process, CNTs are deposited on SiO$_{2}$ substrate and then the gate dielectric is deposited. In this structure, pinholes will appear between CNTs and dielectric layer, which will affect the gate-control and increase the gate leakage current. Therefore, in this paper, we designed a new stack-HfO$_{2}$ top-gate (STG) network CNTFET. By filling the pinholes between CNTs and dielectric layer, the contact interface condition is improved, reducing the subthreshold swing and improving $I_{\rm on}/I_{\rm off}$ of the device. Meanwhile, through first-principles calculations, compared with the conventional structure, the interface charge transfer value of the CNT/HfO$_{2}$ interface for STG is about 5 times smaller than that of CNT/SiO$_{2}$ interface. Specifically, the mobility and $SS$, and $I_{\rm on}/I_{\rm off}$ of the STG structure are 130 cm$^{2}$/V$\cdot$s, 156 mV/dec, and 10$^{7}$, respectively. Taking into account the above advantages, the proposed STG structure has reference value for improving the performance of CNTFET.

Key words: carbon nanotube, HfO2, gate dielectric, interface

中图分类号:  (Structure of nanoscale materials)

  • 61.46.-w
61.05.-a (Techniques for structure determination) 68.47.Gh (Oxide surfaces) 73.63.-b (Electronic transport in nanoscale materials and structures)