Uniform wafer-scale MOCVD homoepitaxy of β-Ga2O3 on 2-inch (010) substrates

doi:10.1088/1674-1056/ae12e0

中国物理B ›› 2026, Vol. 35 ›› Issue (1): 16801-016801.doi: 10.1088/1674-1056/ae12e0

Uniform wafer-scale MOCVD homoepitaxy of β-Ga₂O₃ on 2-inch (010) substrates

Xuanze Zhou(周选择)¹, Haozhong Wu(吴昊中)¹, Yuanjie Ding(丁元杰)¹, Ziyuan Wang(王子原)¹, Zhiyu Zhou(周智宇)¹, Ning Xia(夏宁)², Song Zhang(张嵩)^3,4,†, Guangwei Xu(徐光伟)^1,‡, Hui Zhang(张辉)², and Shibing Long(龙世兵)¹

1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
2 Hangzhou Garen Semiconductor Company Limited, Hangzhou 311200, China;
3 The 46th Research Institute, China Electronics Technology Group Corporation, Tianjin 300220, China;
4 CETC Key Laboratory of Advanced Semiconductor Crystal Materials and Technologies, Tianjin 300220, China

收稿日期:2025-09-19 修回日期:2025-10-13 接受日期:2025-10-14 发布日期:2025-12-30
通讯作者: Song Zhang, Guangwei Xu E-mail:zhangsong02@163.com;xugw@ustc.edu.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant Nos. U23A20358, 62474170, 61925110, 62404214, and 62234007), the University of Science and Technology of China (USTC) Research Funds of the Double First-Class Initiative (Grant No. WK2100000055), the Project of the 46^th Research Institute of CETC (Grant No. WDZC202446007), the JieBang Headed Project of Changsha City Hunan Province (Grant No. kq2301006), and the Opening Project and the Key Laboratory of Nano devices and Applications in Suzhou Institute of Nano-Tech and NanoBionics of CAS.

Uniform wafer-scale MOCVD homoepitaxy of β-Ga₂O₃ on 2-inch (010) substrates

1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
2 Hangzhou Garen Semiconductor Company Limited, Hangzhou 311200, China;
3 The 46th Research Institute, China Electronics Technology Group Corporation, Tianjin 300220, China;
4 CETC Key Laboratory of Advanced Semiconductor Crystal Materials and Technologies, Tianjin 300220, China

Received:2025-09-19 Revised:2025-10-13 Accepted:2025-10-14 Published:2025-12-30
Contact: Song Zhang, Guangwei Xu E-mail:zhangsong02@163.com;xugw@ustc.edu.cn
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant Nos. U23A20358, 62474170, 61925110, 62404214, and 62234007), the University of Science and Technology of China (USTC) Research Funds of the Double First-Class Initiative (Grant No. WK2100000055), the Project of the 46^th Research Institute of CETC (Grant No. WDZC202446007), the JieBang Headed Project of Changsha City Hunan Province (Grant No. kq2301006), and the Opening Project and the Key Laboratory of Nano devices and Applications in Suzhou Institute of Nano-Tech and NanoBionics of CAS.

摘要/Abstract

摘要： The (010) orientation of $\beta $-Ga$_2$O$_3$ is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties. However, progress has been impeded by the unavailability of large-area substrates, limiting studies to small-scale samples. Leveraging the recent emergence of 2-inch wafers, we report the first demonstration of homoepitaxial growth on a 2-inch, Fe-doped semi-insulating (010) $\beta $-Ga$_2$O$_3$ substrate by metal-organic chemical vapor deposition (MOCVD). A systematic, wafer-scale characterization reveals the successful growth of a high-quality epitaxial film. High-resolution x-ray diffraction shows an excellent crystalline structure, with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec. Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm, displaying a distinct step-flow growth mode across the wafer. Furthermore, mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of $\sim 2\times 10^{18}$ cm$^{-3}$ with a RSD of 5.12%. This work provides the first comprehensive assessment of 2-inch (010) Ga$_2$O$_3$ epitaxial wafers, validating a critical material platform for the development and future manufacturing of high-performance power devices.

关键词: $\beta$-Ga$_{{2}}$O$_{{3}}$, metal-organic chemical vapor deposition (MOCVD), wafer scale, uniformity

Abstract: The (010) orientation of $\beta $-Ga$_2$O$_3$ is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties. However, progress has been impeded by the unavailability of large-area substrates, limiting studies to small-scale samples. Leveraging the recent emergence of 2-inch wafers, we report the first demonstration of homoepitaxial growth on a 2-inch, Fe-doped semi-insulating (010) $\beta $-Ga$_2$O$_3$ substrate by metal-organic chemical vapor deposition (MOCVD). A systematic, wafer-scale characterization reveals the successful growth of a high-quality epitaxial film. High-resolution x-ray diffraction shows an excellent crystalline structure, with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec. Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm, displaying a distinct step-flow growth mode across the wafer. Furthermore, mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of $\sim 2\times 10^{18}$ cm$^{-3}$ with a RSD of 5.12%. This work provides the first comprehensive assessment of 2-inch (010) Ga$_2$O$_3$ epitaxial wafers, validating a critical material platform for the development and future manufacturing of high-performance power devices.

Key words: $\beta$-Ga$_{{2}}$O$_{{3}}$, metal-organic chemical vapor deposition (MOCVD), wafer scale, uniformity

中图分类号: (Semiconductors)

68.35.bg

84.30.Jc (Power electronics; power supply circuits) 81.10.Bk (Growth from vapor) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)

Xuanze Zhou(周选择), Haozhong Wu(吴昊中), Yuanjie Ding(丁元杰), Ziyuan Wang(王子原), Zhiyu Zhou(周智宇), Ning Xia(夏宁), Song Zhang(张嵩), Guangwei Xu(徐光伟), Hui Zhang(张辉), and Shibing Long(龙世兵). Uniform wafer-scale MOCVD homoepitaxy of β-Ga₂O₃ on 2-inch (010) substrates[J]. 中国物理B, 2026, 35(1): 16801-016801.

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Uniform wafer-scale MOCVD homoepitaxy of β-Ga₂O₃ on 2-inch (010) substrates

Uniform wafer-scale MOCVD homoepitaxy of β-Ga₂O₃ on 2-inch (010) substrates

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