中国物理B ›› 2024, Vol. 33 ›› Issue (4): 46801-046801.doi: 10.1088/1674-1056/ad16d5

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Microscopic growth mechanism and edge states of monolayer 1T'-MoTe2

Haipeng Zhao(赵海鹏)1, Yin Liu(刘隐)1, Shengguo Yang(杨胜国)2,3, Chenfang Lin(林陈昉)1, Mingxing Chen(陈明星)2,3, Kai Braun4, Xinyi Luo(罗心仪)1, Siyu Li(李思宇)1, Anlian Pan(潘安练)1,†, and Xiao Wang(王笑)1,‡   

  1. 1 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China;
    2 Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081, China;
    3 State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
    4 Institute of Physical and Theoretical Chemistry and LISA+, University of Tubingen, Auf der Morgenstelle 18, ¨ 72076 Tubingen, Germany
  • 收稿日期:2023-11-04 修回日期:2023-12-11 接受日期:2023-12-19 出版日期:2024-03-19 发布日期:2024-03-27
  • 通讯作者: Anlian Pan, Xiao Wang E-mail:anlian.pan@hnu.edu.cn;xiao_wang@hnu.edu.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2022YFA1204302), the National Natural Science Foundation of China (Grant Nos. 52022029, 52221001, 92263107, U23A20570, 62090035, U19A2090, and 12174098), the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2022JJ30142 and 2019XK2001), and in part supported by the State Key Laboratory of Powder Metallurgy, Central South University. Calculations were carried out using computing resources at the High Performance Computing Platform of Hunan Normal University.

Microscopic growth mechanism and edge states of monolayer 1T'-MoTe2

Haipeng Zhao(赵海鹏)1, Yin Liu(刘隐)1, Shengguo Yang(杨胜国)2,3, Chenfang Lin(林陈昉)1, Mingxing Chen(陈明星)2,3, Kai Braun4, Xinyi Luo(罗心仪)1, Siyu Li(李思宇)1, Anlian Pan(潘安练)1,†, and Xiao Wang(王笑)1,‡   

  1. 1 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China;
    2 Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081, China;
    3 State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
    4 Institute of Physical and Theoretical Chemistry and LISA+, University of Tubingen, Auf der Morgenstelle 18, ¨ 72076 Tubingen, Germany
  • Received:2023-11-04 Revised:2023-12-11 Accepted:2023-12-19 Online:2024-03-19 Published:2024-03-27
  • Contact: Anlian Pan, Xiao Wang E-mail:anlian.pan@hnu.edu.cn;xiao_wang@hnu.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2022YFA1204302), the National Natural Science Foundation of China (Grant Nos. 52022029, 52221001, 92263107, U23A20570, 62090035, U19A2090, and 12174098), the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2022JJ30142 and 2019XK2001), and in part supported by the State Key Laboratory of Powder Metallurgy, Central South University. Calculations were carried out using computing resources at the High Performance Computing Platform of Hunan Normal University.

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摘要： Transition metal ditellurides (TMTDs) have versatile physical properties, including non-trivial topology, Weyl semimetal states and unique spin texture. Controlled growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their applications. Here, we demonstrate the epitaxial growth of 1T'-MoTe2 on Au (111) and graphitized silicon carbide (Gr/SiC) by molecular beam epitaxy (MBE). We investigate the morphology of the grown 1T'-MoTe2 at the atomic level by scanning tunnelling microscopy (STM) and reveal the corresponding microscopic growth mechanism. It is found that the unique ordered Te structures preferentially deposited on Au (111) regulate the growth of monolayer single crystal 1T'-MoTe2, while the Mo clusters were preferentially deposited on the Gr/SiC substrate, which impedes the ordered growth of monolayer MoTe2. We confirm that the size of single crystal 1T'-MoTe2 grown on Au (111) is nearly two orders of magnitude larger than that on Gr/SiC. By scanning tunnelling spectroscopy (STS), we observe that the STS spectrum of the monolayer 1T'-MoTe2 nano-island at the edge is different from that at the interior, which exhibits enhanced conductivity.

关键词: transition metal ditellurides, 1T'-MoTe2, microscopic growth mechanism, scanning tunneling microscopy/spectroscopy (STM/S)

Abstract: Transition metal ditellurides (TMTDs) have versatile physical properties, including non-trivial topology, Weyl semimetal states and unique spin texture. Controlled growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their applications. Here, we demonstrate the epitaxial growth of 1T'-MoTe2 on Au (111) and graphitized silicon carbide (Gr/SiC) by molecular beam epitaxy (MBE). We investigate the morphology of the grown 1T'-MoTe2 at the atomic level by scanning tunnelling microscopy (STM) and reveal the corresponding microscopic growth mechanism. It is found that the unique ordered Te structures preferentially deposited on Au (111) regulate the growth of monolayer single crystal 1T'-MoTe2, while the Mo clusters were preferentially deposited on the Gr/SiC substrate, which impedes the ordered growth of monolayer MoTe2. We confirm that the size of single crystal 1T'-MoTe2 grown on Au (111) is nearly two orders of magnitude larger than that on Gr/SiC. By scanning tunnelling spectroscopy (STS), we observe that the STS spectrum of the monolayer 1T'-MoTe2 nano-island at the edge is different from that at the interior, which exhibits enhanced conductivity.

Key words: transition metal ditellurides, 1T'-MoTe2, microscopic growth mechanism, scanning tunneling microscopy/spectroscopy (STM/S)

中图分类号:  (Scanning tunneling microscopy (including chemistry induced with STM))

  • 68.37.Ef
73.20.-r (Electron states at surfaces and interfaces) 37.20.+j (Atomic and molecular beam sources and techniques)