Manipulating charge density wave state in kagome compound RbV3Sb5

doi:10.1088/1674-1056/acd8b1

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 96801-096801.doi: 10.1088/1674-1056/acd8b1

Manipulating charge density wave state in kagome compound RbV₃Sb₅

Yu-Xin Meng(孟雨欣)^1,2, Cheng-Long Xue(薛成龙)^1,2, Li-Guo Dou(窦立国)^1,2, Wei-Min Zhao(赵伟民)^1,2, Qi-Wei Wang(汪琪玮)^1,2, Yong-Jie Xu(徐永杰)^1,2, Xiangqi Liu(刘祥麒)³, Wei Xia(夏威)^3,4, Yanfeng Guo(郭艳峰)^3,4,†, and Shao-Chun Li(李绍春)^1,2,5,6,‡

1 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
3 School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China;
4 Shanghai Tech Laboratory for Topological Physics, Shanghai 201210, China;
5 Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China;
6 Hefei National Laboratory, Hefei 230088, China

收稿日期:2023-04-17 修回日期:2023-05-23 接受日期:2023-05-25 发布日期:2023-09-01
通讯作者: Yanfeng Guo, Shao-Chun Li E-mail:guoyf@shanghaitech.edu.cn;scli@nju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1400403), the National Natural Science Foundation of China (Grant Nos. 92165205, 11790311, and 11774149), and Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800). Y F Guo acknowledges the support by the open project of Beijing National Laboratory for Condensed Matter Physics (Grant No. ZBJ2106110017) and the Double First-Class Initiative Fund of Shanghai Tech University.

Manipulating charge density wave state in kagome compound RbV₃Sb₅

1 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
3 School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China;
4 Shanghai Tech Laboratory for Topological Physics, Shanghai 201210, China;
5 Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China;
6 Hefei National Laboratory, Hefei 230088, China

Received:2023-04-17 Revised:2023-05-23 Accepted:2023-05-25 Published:2023-09-01
Contact: Yanfeng Guo, Shao-Chun Li E-mail:guoyf@shanghaitech.edu.cn;scli@nju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1400403), the National Natural Science Foundation of China (Grant Nos. 92165205, 11790311, and 11774149), and Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800). Y F Guo acknowledges the support by the open project of Beijing National Laboratory for Condensed Matter Physics (Grant No. ZBJ2106110017) and the Double First-Class Initiative Fund of Shanghai Tech University.

摘要/Abstract

摘要： Owing to the unique electronic structure, kagome materials AV₃Sb₅ (A=K, Rb, Cs) provide a fertile platform of quantum phenomena such as the strongly correlated state and topological Dirac band. It is well known that RbV₃Sb₅ exhibits a 2×2 unconventional charge density wave (CDW) state at low temperature, and the mechanism is controversial. Here, by using scanning tunneling microscopy/spectroscopy (STM/STS), we successfully manipulated the CDW state in the Sb plane of RbV₃Sb₅, and realized a new sqrt $\sqrt 3 $×$\sqrt 3 $ modulation together with the ubiquitous 2×2 period in the CDW state of RbV₃Sb₅. This work provides a new understanding of the collective quantum ground states in the kagome materials.

关键词: kagome material, charge density wave, scanning tunneling microscopy

Abstract: Owing to the unique electronic structure, kagome materials AV₃Sb₅ (A=K, Rb, Cs) provide a fertile platform of quantum phenomena such as the strongly correlated state and topological Dirac band. It is well known that RbV₃Sb₅ exhibits a 2×2 unconventional charge density wave (CDW) state at low temperature, and the mechanism is controversial. Here, by using scanning tunneling microscopy/spectroscopy (STM/STS), we successfully manipulated the CDW state in the Sb plane of RbV₃Sb₅, and realized a new sqrt $\sqrt 3 $×$\sqrt 3 $ modulation together with the ubiquitous 2×2 period in the CDW state of RbV₃Sb₅. This work provides a new understanding of the collective quantum ground states in the kagome materials.

Key words: kagome material, charge density wave, scanning tunneling microscopy

中图分类号: (Scanning tunneling microscopy (including chemistry induced with STM))

68.37.Ef

71.45.Lr (Charge-density-wave systems) 73.20.At (Surface states, band structure, electron density of states)

Yu-Xin Meng(孟雨欣), Cheng-Long Xue(薛成龙), Li-Guo Dou(窦立国), Wei-Min Zhao(赵伟民), Qi-Wei Wang(汪琪玮), Yong-Jie Xu(徐永杰), Xiangqi Liu(刘祥麒), Wei Xia(夏威), Yanfeng Guo(郭艳峰), and Shao-Chun Li(李绍春). Manipulating charge density wave state in kagome compound RbV₃Sb₅[J]. 中国物理B, 2023, 32(9): 96801-096801.

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Manipulating charge density wave state in kagome compound RbV₃Sb₅

Manipulating charge density wave state in kagome compound RbV₃Sb₅

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