中国物理B ›› 2023, Vol. 32 ›› Issue (7): 76101-076101.doi: 10.1088/1674-1056/acac07

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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

Yuan-Yuan Xue(薛院院)1,2, Zu-Jun Wang(王祖军)2,†, Wei Chen(陈伟)2,‡, Xiao-Qiang Guo(郭晓强)2, Zhi-Bin Yao(姚志斌)2, Bao-Ping He(何宝平)2, Xu Nie(聂栩)3, Shankun Lai(赖善坤)3, Gang Huang(黄港)3, Jiang-Kun Sheng(盛江坤)2, Wu-Ying Ma(马武英)2, and Shi-Long Gou(缑石龙)2   

  1. 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics, Peking University, Beijing 100871, China;
    2 State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    3 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
  • 收稿日期:2022-07-14 修回日期:2022-11-22 接受日期:2022-12-16 出版日期:2023-06-15 发布日期:2023-07-05
  • 通讯作者: Zu-Jun Wang, Wei Chen E-mail:wangzujun@nint.ac.cn;chenwei@nint.ac.cn
  • 基金资助:
    Project supported by the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1903Z, 1803) and the National Natural Science Foundation of China (Grant Nos. U2167208 and 11875223).

Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

Yuan-Yuan Xue(薛院院)1,2, Zu-Jun Wang(王祖军)2,†, Wei Chen(陈伟)2,‡, Xiao-Qiang Guo(郭晓强)2, Zhi-Bin Yao(姚志斌)2, Bao-Ping He(何宝平)2, Xu Nie(聂栩)3, Shankun Lai(赖善坤)3, Gang Huang(黄港)3, Jiang-Kun Sheng(盛江坤)2, Wu-Ying Ma(马武英)2, and Shi-Long Gou(缑石龙)2   

  1. 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics, Peking University, Beijing 100871, China;
    2 State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    3 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
  • Received:2022-07-14 Revised:2022-11-22 Accepted:2022-12-16 Online:2023-06-15 Published:2023-07-05
  • Contact: Zu-Jun Wang, Wei Chen E-mail:wangzujun@nint.ac.cn;chenwei@nint.ac.cn
  • Supported by:
    Project supported by the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1903Z, 1803) and the National Natural Science Foundation of China (Grant Nos. U2167208 and 11875223).

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摘要： Displacement damage effects on the charge-coupled device (CCD) induced by neutrons at the back-streaming white neutron source (Back-n) in the China Spallation Neutron Source (CSNS) are analyzed according to an online irradiation experiment. The hot pixels, random telegraph signal (RTS), mean dark signal, dark current and dark signal non-uniformity (DSNU) induced by Back-n are presented. The dark current is calculated according to the mean dark signal at various integration times. The single-particle displacement damage and transient response are also observed based on the online measurement data. The trends of hot pixels, mean dark signal, DSNU and RTS degradation are related to the integration time and irradiation fluence. The mean dark signal, dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation. In addition, the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design (TCAD) simulation. Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs, leading to an increase in the dark signal.

关键词: displacement damage effects, charge-coupled device (CCD), China Spallation Neutron Source (CSNS), mechanisms, technology computer-aided design (TCAD)

Abstract: Displacement damage effects on the charge-coupled device (CCD) induced by neutrons at the back-streaming white neutron source (Back-n) in the China Spallation Neutron Source (CSNS) are analyzed according to an online irradiation experiment. The hot pixels, random telegraph signal (RTS), mean dark signal, dark current and dark signal non-uniformity (DSNU) induced by Back-n are presented. The dark current is calculated according to the mean dark signal at various integration times. The single-particle displacement damage and transient response are also observed based on the online measurement data. The trends of hot pixels, mean dark signal, DSNU and RTS degradation are related to the integration time and irradiation fluence. The mean dark signal, dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation. In addition, the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design (TCAD) simulation. Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs, leading to an increase in the dark signal.

Key words: displacement damage effects, charge-coupled device (CCD), China Spallation Neutron Source (CSNS), mechanisms, technology computer-aided design (TCAD)

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
07.77.Ka (Charged-particle beam sources and detectors) 29.40.-n (Radiation detectors) 85.60.Gz (Photodetectors (including infrared and CCD detectors))