Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

doi:10.1088/1674-1056/acae74

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 66107-066107.doi: 10.1088/1674-1056/acae74

所属专题： SPECIAL TOPIC — Celebrating the 100th Anniversary of Physics Discipline of Xiamen University

Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

Huan Xing(邢欢)¹, Hui-Qiong Wang(王惠琼)^1,2,†, Tinglu Song(宋廷鲁)^3,‡, Chunli Li(李纯莉)⁴, Yang Dai(戴扬)⁵, Gengming Fu(傅耿明)¹, Junyong Kang(康俊勇)¹, and Jin-Cheng Zheng(郑金成)^1,2,§

1 Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education;Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, China;
2 Department of Physics and Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang 439000, Malaysia;
3 Experimental Center of Advanced Materials, School of Materials Science&Engineering, Beijing Institute of Technology, Beijing 100081, China;
4 School of Material Science&Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;
5 Department of Chemical Engineering, School of Environmental and Chemical Engineering, and Institute for Sustainable Energy, Shanghai University, Shanghai 200444, China

收稿日期:2022-11-23 修回日期:2022-12-22 接受日期:2022-12-27 出版日期:2023-05-17 发布日期:2023-05-17
通讯作者: Hui-Qiong Wang, Tinglu Song, Jin-Cheng Zheng E-mail:hqwang@xmu.edu.cn;song@bit.edu.cn;jczheng@xmu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3605403).

Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

1 Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education;Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, China;
2 Department of Physics and Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang 439000, Malaysia;
3 Experimental Center of Advanced Materials, School of Materials Science&Engineering, Beijing Institute of Technology, Beijing 100081, China;
4 School of Material Science&Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;
5 Department of Chemical Engineering, School of Environmental and Chemical Engineering, and Institute for Sustainable Energy, Shanghai University, Shanghai 200444, China

Received:2022-11-23 Revised:2022-12-22 Accepted:2022-12-27 Online:2023-05-17 Published:2023-05-17
Contact: Hui-Qiong Wang, Tinglu Song, Jin-Cheng Zheng E-mail:hqwang@xmu.edu.cn;song@bit.edu.cn;jczheng@xmu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3605403).

摘要/Abstract

摘要： The doping of ZnO has attracted lots of attention because it is an important way to tune the properties of ZnO. Post-doping after growth is one of the efficient strategies. Here, we report a unique approach to successfully dope the single crystalline ZnO with Ag by the laser-induced method, which can effectively further post-treat grown samples. Magnetron sputtering was used to coat the Ag film with a thickness of about 50 nm on the single crystalline ZnO. Neodymium-doped yttrium aluminum garnet (Nd:YAG) laser was chosen to irradiate the Ag-capped ZnO samples, followed by annealing at 700 ℃ for two hours to form ZnO:Ag. The three-dimensional (3D) information of the elemental distribution of Ag in ZnO was obtained through time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS and core-level x-ray photoelectron spectroscopy (XPS) demonstrated that the Ag impurities could be effectively doped into single crystalline ZnO samples as deep as several hundred nanometers. Obvious broadening of core level XPS profiles of Ag from the surface to depths of hundred nms was observed, indicating the variance of chemical state changes in laser-induced Ag-doped ZnO. Interesting features of electronic mixing states were detected in the valence band XPS of ZnO:Ag, suggesting the strong coupling or interaction of Ag and ZnO in the sample rather than their simple mixture. The Ag-doped ZnO also showed a narrower bandgap and a decrease in thermal diffusion coefficient compared to the pure ZnO, which would be beneficial to thermoelectric performance.

关键词: zinc oxide, Ag-doping, laser-induced technique, XPS, SIMS, thermal diffusivity

Abstract: The doping of ZnO has attracted lots of attention because it is an important way to tune the properties of ZnO. Post-doping after growth is one of the efficient strategies. Here, we report a unique approach to successfully dope the single crystalline ZnO with Ag by the laser-induced method, which can effectively further post-treat grown samples. Magnetron sputtering was used to coat the Ag film with a thickness of about 50 nm on the single crystalline ZnO. Neodymium-doped yttrium aluminum garnet (Nd:YAG) laser was chosen to irradiate the Ag-capped ZnO samples, followed by annealing at 700 ℃ for two hours to form ZnO:Ag. The three-dimensional (3D) information of the elemental distribution of Ag in ZnO was obtained through time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS and core-level x-ray photoelectron spectroscopy (XPS) demonstrated that the Ag impurities could be effectively doped into single crystalline ZnO samples as deep as several hundred nanometers. Obvious broadening of core level XPS profiles of Ag from the surface to depths of hundred nms was observed, indicating the variance of chemical state changes in laser-induced Ag-doped ZnO. Interesting features of electronic mixing states were detected in the valence band XPS of ZnO:Ag, suggesting the strong coupling or interaction of Ag and ZnO in the sample rather than their simple mixture. The Ag-doped ZnO also showed a narrower bandgap and a decrease in thermal diffusion coefficient compared to the pure ZnO, which would be beneficial to thermoelectric performance.

Key words: zinc oxide, Ag-doping, laser-induced technique, XPS, SIMS, thermal diffusivity

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

81.05.Dz (II-VI semiconductors) 65.40.-b (Thermal properties of crystalline solids)

Huan Xing(邢欢), Hui-Qiong Wang(王惠琼), Tinglu Song(宋廷鲁), Chunli Li(李纯莉), Yang Dai(戴扬), Gengming Fu(傅耿明), Junyong Kang(康俊勇), and Jin-Cheng Zheng(郑金成). Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique[J]. 中国物理B, 2023, 32(6): 66107-066107.

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Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

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