Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

doi:10.1088/1674-1056/ac891b

中国物理B ›› 2023, Vol. 32 ›› Issue (3): 37303-037303.doi: 10.1088/1674-1056/ac891b

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process

Jingshu Guo(郭静姝)^1,2, Jiejie Zhu(祝杰杰)^1,2,†, Siyu Liu(刘思雨)^1,2, Jielong Liu(刘捷龙)^2,3, Jiahao Xu(徐佳豪)^1,2, Weiwei Chen(陈伟伟)⁴, Yuwei Zhou(周雨威)^2,3, Xu Zhao(赵旭)^2,3, Minhan Mi(宓珉瀚)^1,2, Mei Yang(杨眉)^2,3, Xiaohua Ma(马晓华)^1,2,‡, and Yue Hao(郝跃)^1,2

1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 The National Key Discipline Laboratory of Wide Bandgap Semiconductor, Xidian University, Xi'an 710071, China;
3 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
4 China Academy of Space Technology(Xi'an), Xi'an 710100, China

收稿日期:2022-04-24 修回日期:2022-07-25 接受日期:2022-08-12 出版日期:2023-02-14 发布日期:2023-02-21
通讯作者: Jiejie Zhu, Xiaohua Ma E-mail:jjzhu@mail.xidian.edu.cn;xhma@xidian.edu.cn
基金资助:
Project supported by the Fundamental Research Funds for the National Key Research and Development Project of China (Grant No. 2020YFB1807403), the National Natural Science Foundation of China (Grant Nos. 62174125 and 62131014), the Fundamental Research Funds for the Central Universities (Grant Nos. QTZX22022 and YJS2213), and the Innovation Fund of Xidian University.

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process

1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 The National Key Discipline Laboratory of Wide Bandgap Semiconductor, Xidian University, Xi'an 710071, China;
3 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
4 China Academy of Space Technology(Xi'an), Xi'an 710100, China

Received:2022-04-24 Revised:2022-07-25 Accepted:2022-08-12 Online:2023-02-14 Published:2023-02-21
Contact: Jiejie Zhu, Xiaohua Ma E-mail:jjzhu@mail.xidian.edu.cn;xhma@xidian.edu.cn
Supported by:
Project supported by the Fundamental Research Funds for the National Key Research and Development Project of China (Grant No. 2020YFB1807403), the National Natural Science Foundation of China (Grant Nos. 62174125 and 62131014), the Fundamental Research Funds for the Central Universities (Grant Nos. QTZX22022 and YJS2213), and the Innovation Fund of Xidian University.

摘要/Abstract

摘要： This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal-organic chemical vapor deposition (MOCVD) regrowth technique. The 150-nm regrown n⁺-InGaN exhibits a low sheet resistance of 31 Ω/□, resulting in an extremely low contact resistance of 0.102 Ω·mm between n⁺-InGaN and InAlN/GaN channels. Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts. Then, the diffusion mechanism between n⁺-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations, which could benefit the further process optimization.

关键词: InAlN/GaN, low-resistance ohmic contacts, metal-organic chemical vapor deposition (MOCVD), n⁺-InGaN, time of flight secondary ion mass spectrometry (TOF-SIMS)

Abstract: This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal-organic chemical vapor deposition (MOCVD) regrowth technique. The 150-nm regrown n⁺-InGaN exhibits a low sheet resistance of 31 Ω/□, resulting in an extremely low contact resistance of 0.102 Ω·mm between n⁺-InGaN and InAlN/GaN channels. Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts. Then, the diffusion mechanism between n⁺-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations, which could benefit the further process optimization.

Key words: InAlN/GaN, low-resistance ohmic contacts, metal-organic chemical vapor deposition (MOCVD), n⁺-InGaN, time of flight secondary ion mass spectrometry (TOF-SIMS)

中图分类号: (Contact resistance, contact potential)

73.40.Cg

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors)

Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process

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