Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation

doi:10.1088/1674-1056/ac8a8e

中国物理B ›› 2023, Vol. 32 ›› Issue (1): 16701-016701.doi: 10.1088/1674-1056/ac8a8e

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

Jian-Ying Yue(岳建英)^1,2, Xue-Qiang Ji(季学强)^1,2, Shan Li(李山)^1,2, Xiao-Hui Qi(岐晓辉)^1,2, Pei-Gang Li(李培刚)^1,2,†, Zhen-Ping Wu(吴真平)^1,2, and Wei-Hua Tang(唐为华)^1,2,3,‡

1 Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 College of Electronic and Optical Engineering&College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210046, China

收稿日期:2022-06-11 修回日期:2022-08-15 接受日期:2022-08-18 出版日期:2022-12-08 发布日期:2022-12-20
通讯作者: Pei-Gang Li, Wei-Hua Tang E-mail:pgli@bupt.edu.cn;whtang@njupt.edu.cn
基金资助:
Project supported by China Postdoctoral Science Foundation (Grant No. 042600055) and Research on Frontiers of Materials Science, Beijing Municipal Science and Technology Commission (Grant No. Z181100004418006).

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

1 Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 College of Electronic and Optical Engineering&College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210046, China

Received:2022-06-11 Revised:2022-08-15 Accepted:2022-08-18 Online:2022-12-08 Published:2022-12-20
Contact: Pei-Gang Li, Wei-Hua Tang E-mail:pgli@bupt.edu.cn;whtang@njupt.edu.cn
Supported by:
Project supported by China Postdoctoral Science Foundation (Grant No. 042600055) and Research on Frontiers of Materials Science, Beijing Municipal Science and Technology Commission (Grant No. Z181100004418006).

摘要/Abstract

摘要： Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based on β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ film grown by metal-organic chemical vapor deposition. It was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers, resulting in low switching ratio and low responsivity of the device. In this work, β -(Al_0.25Ga_0.75)₂O₃ films are used as surface passivation materials. Owning to its wide band gap, we obtain excellent light transmission and high lattice matching with β -Ga₂O₃. We explore the change and mechanism of the detection performance of the β -Ga₂O₃ detector after β -(Al_0.25Ga_0.75)₂O₃ surface passivation. It is found that under the illumination with 254 nm light at bias 5 V, the β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10⁵. The dark current is sharply reduced about 50 times after passivation of the β -Ga₂O₃ surface, and current on/off ratio increases by approximately 2 times. It is obvious that β -Ga₂O₃ detectors with β -(Al_0.25Ga_0.75)₂O₃ surface passivation can offer superior detector performance.

关键词: β-(Al_0.25Ga_0.75)₂O₃/β-Ga₂O₃, MOCVD, photodetectors, defect passivation

Abstract: Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based on β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ film grown by metal-organic chemical vapor deposition. It was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers, resulting in low switching ratio and low responsivity of the device. In this work, β -(Al_0.25Ga_0.75)₂O₃ films are used as surface passivation materials. Owning to its wide band gap, we obtain excellent light transmission and high lattice matching with β -Ga₂O₃. We explore the change and mechanism of the detection performance of the β -Ga₂O₃ detector after β -(Al_0.25Ga_0.75)₂O₃ surface passivation. It is found that under the illumination with 254 nm light at bias 5 V, the β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10⁵. The dark current is sharply reduced about 50 times after passivation of the β -Ga₂O₃ surface, and current on/off ratio increases by approximately 2 times. It is obvious that β -Ga₂O₃ detectors with β -(Al_0.25Ga_0.75)₂O₃ surface passivation can offer superior detector performance.

Key words: β-(Al_0.25Ga_0.75)₂O₃/β-Ga₂O₃, MOCVD, photodetectors, defect passivation

中图分类号: (Films)

67.30.hr

71.20.Nr (Semiconductor compounds) 85.60.Gz (Photodetectors (including infrared and CCD detectors)) 81.65.Rv (Passivation)

Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation[J]. 中国物理B, 2023, 32(1): 16701-016701.

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Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

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