Designing high k dielectric films with LiPON—Al2O3 hybrid structure by atomic layer deposition

doi:10.1088/1674-1056/ac3736

中国物理B ›› 2022, Vol. 31 ›› Issue (5): 57701-057701.doi: 10.1088/1674-1056/ac3736

Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition

Ze Feng(冯泽)¹, Yitong Wang(王一同)¹, Jilong Hao(郝继龙)², Meiyi Jing(井美艺)¹, Feng Lu(卢峰)¹, Weihua Wang(王维华)¹, Yahui Cheng(程雅慧)¹, Shengkai Wang(王盛凯)², Hui Liu(刘晖)¹, and Hong Dong(董红)^1,†

1 Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China;
2 High-Frequency High-Voltage Device and Integrated Circus R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2021-08-10 修回日期:2021-11-01 发布日期:2022-04-21
通讯作者: Hong Dong,E-mail:donghong@nankai.edu.cn E-mail:donghong@nankai.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos.2018YFB2200500 and 2018YFB2200504) and the National Natural Science Foundation of China (Grant Nos.22090010,22090011,and 61504070).

Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition

1 Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China;
2 High-Frequency High-Voltage Device and Integrated Circus R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

Received:2021-08-10 Revised:2021-11-01 Published:2022-04-21
Contact: Hong Dong,E-mail:donghong@nankai.edu.cn E-mail:donghong@nankai.edu.cn
About author:2021-11-6
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos.2018YFB2200500 and 2018YFB2200504) and the National Natural Science Foundation of China (Grant Nos.22090010,22090011,and 61504070).

摘要/Abstract

摘要： A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things, which demand relatively low frequency response. Here, atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the LiPON-Al₂O₃ hybrid structure. The LiPON thin film is periodically stacked in the Al₂O₃ matrix. This hybrid structure presents a frequency-dependent dielectric constant, of which k is significantly higher than the aluminum oxide matrix from 1 kHz to 200 kHz in frequency. The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field, which shows an additional polarization to the Al₂O₃ matrix. This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.

关键词: high k dielectric, atomic layer deposition, polarization

Abstract: A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things, which demand relatively low frequency response. Here, atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the LiPON-Al₂O₃ hybrid structure. The LiPON thin film is periodically stacked in the Al₂O₃ matrix. This hybrid structure presents a frequency-dependent dielectric constant, of which k is significantly higher than the aluminum oxide matrix from 1 kHz to 200 kHz in frequency. The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field, which shows an additional polarization to the Al₂O₃ matrix. This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.

Key words: high k dielectric, atomic layer deposition, polarization

中图分类号: (Permittivity (dielectric function))

77.22.Ch

81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)

Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition[J]. 中国物理B, 2022, 31(5): 57701-057701.

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Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition

Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition

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