Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

doi:10.1088/1674-1056/ac3a61

中国物理B ›› 2022, Vol. 31 ›› Issue (4): 48103-048103.doi: 10.1088/1674-1056/ac3a61

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军)^†

Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China

收稿日期:2021-09-17 修回日期:2021-10-31 接受日期:2021-11-17 出版日期:2022-03-16 发布日期:2022-03-10
通讯作者: Jun Xu E-mail:xujun@dlut.edu.cn

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军)^†

Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China

Received:2021-09-17 Revised:2021-10-31 Accepted:2021-11-17 Online:2022-03-16 Published:2022-03-10
Contact: Jun Xu E-mail:xujun@dlut.edu.cn

摘要/Abstract

摘要： Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by microwave electron cyclotron resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800 ℃, 900 ℃, and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The surface morphology of the films before and after the high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.

关键词: SiC, anti-oxidation, silicon-rich, sputtering

Abstract: Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by microwave electron cyclotron resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800 ℃, 900 ℃, and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The surface morphology of the films before and after the high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.

Key words: SiC, anti-oxidation, silicon-rich, sputtering

中图分类号: (Deposition by sputtering)

81.15.Cd

68.60.Dv (Thermal stability; thermal effects)

Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军). Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films[J]. 中国物理B, 2022, 31(4): 48103-048103.

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Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

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