中国物理B ›› 2022, Vol. 31 ›› Issue (12): 128503-128503.doi: 10.1088/1674-1056/ac8729

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Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Zhaojun Liu(刘昭君)1,2, Lian-Qing Zhu(祝连庆)2,†, Xian-Tong Zheng(郑显通)2, Yuan Liu(柳渊)2, Li-Dan Lu(鹿利单)2, and Dong-Liang Zhang(张东亮)2,‡   

  1. 1 The School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China;
    2 Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science&Technology University, Beijing 100192, China
  • 收稿日期:2022-05-10 修回日期:2022-07-18 接受日期:2022-08-05 出版日期:2022-11-11 发布日期:2022-11-19
  • 通讯作者: Lian-Qing Zhu, Dong-Liang Zhang E-mail:lqzhu_bistu@sina.com;zdl_photonics@bistu.edu.cn
  • 基金资助:
    Project supported by the Beijing Scholars Program (Grant No. 74A2111113), the Research Project of Beijing Education Committee (Grant No. KM202111232019), the National Natural Science Foundation of China (Grant No. 62105039), and the Research Project of Beijing Information Science & Technology University (Grant No. 2022XJJ07).

Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Zhaojun Liu(刘昭君)1,2, Lian-Qing Zhu(祝连庆)2,†, Xian-Tong Zheng(郑显通)2, Yuan Liu(柳渊)2, Li-Dan Lu(鹿利单)2, and Dong-Liang Zhang(张东亮)2,‡   

  1. 1 The School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China;
    2 Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science&Technology University, Beijing 100192, China
  • Received:2022-05-10 Revised:2022-07-18 Accepted:2022-08-05 Online:2022-11-11 Published:2022-11-19
  • Contact: Lian-Qing Zhu, Dong-Liang Zhang E-mail:lqzhu_bistu@sina.com;zdl_photonics@bistu.edu.cn
  • Supported by:
    Project supported by the Beijing Scholars Program (Grant No. 74A2111113), the Research Project of Beijing Education Committee (Grant No. KM202111232019), the National Natural Science Foundation of China (Grant No. 62105039), and the Research Project of Beijing Information Science & Technology University (Grant No. 2022XJJ07).

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摘要： We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30-39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 μ, which can be used for mid-wave infrared (MWIR) detection.

关键词: InAs/GaSb type-II superlattice, molecular beam epitaxy, interface, mid-wave infrared

Abstract: We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30-39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 μ, which can be used for mid-wave infrared (MWIR) detection.

Key words: InAs/GaSb type-II superlattice, molecular beam epitaxy, interface, mid-wave infrared

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
68.65.Cd (Superlattices) 02.70.-c (Computational techniques; simulations)