中国物理B ›› 2022, Vol. 31 ›› Issue (10): 106101-106101.doi: 10.1088/1674-1056/ac80b0

• • 上一篇    下一篇

Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier

Yinzhe Liu(刘寅哲)1,2, Kewei Liu(刘可为)1,2,†, Jialin Yang(杨佳霖)1,2, Zhen Cheng(程祯)1,2, Dongyang Han(韩冬阳)1,2, Qiu Ai(艾秋)1,2, Xing Chen(陈星)1,2, Yongxue Zhu(朱勇学)1,2, Binghui Li(李炳辉)1,2, Lei Liu(刘雷)1,2, and Dezhen Shen(申德振)1,2,‡   

  1. 1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2022-06-12 修回日期:2022-07-11 出版日期:2022-10-16 发布日期:2022-09-24
  • 通讯作者: Kewei Liu, Dezhen Shen E-mail:liukw@ciomp.ac.cn;shendz@ciomp.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074148, 61875194, 11727902,12074372, 11774341, 11974344, 61975204, and 11804335), the National Ten Thousand Talent Program for Young Topnotch Talents, the Key Research and Development Program of Changchun City (Grant No. 21ZY05), the 100 Talents Program of the Chinese Academy of Sciences, Youth Innovation Promotion Association, CAS (Grant No. 2020225), Jilin Province Science Fund (Grant No. 20210101145JC), and XuGuang Talents Plan of CIOMP.

Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier

Yinzhe Liu(刘寅哲)1,2, Kewei Liu(刘可为)1,2,†, Jialin Yang(杨佳霖)1,2, Zhen Cheng(程祯)1,2, Dongyang Han(韩冬阳)1,2, Qiu Ai(艾秋)1,2, Xing Chen(陈星)1,2, Yongxue Zhu(朱勇学)1,2, Binghui Li(李炳辉)1,2, Lei Liu(刘雷)1,2, and Dezhen Shen(申德振)1,2,‡   

  1. 1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2022-06-12 Revised:2022-07-11 Online:2022-10-16 Published:2022-09-24
  • Contact: Kewei Liu, Dezhen Shen E-mail:liukw@ciomp.ac.cn;shendz@ciomp.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074148, 61875194, 11727902,12074372, 11774341, 11974344, 61975204, and 11804335), the National Ten Thousand Talent Program for Young Topnotch Talents, the Key Research and Development Program of Changchun City (Grant No. 21ZY05), the 100 Talents Program of the Chinese Academy of Sciences, Youth Innovation Promotion Association, CAS (Grant No. 2020225), Jilin Province Science Fund (Grant No. 20210101145JC), and XuGuang Talents Plan of CIOMP.

RichHTML

11

PDF (PC)

346

赞

摘要： One-dimensional (1D) micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors. However, in the axial direction of micro/nanowires, the carriers can transport freely driven by an external electric field, which usually produces large dark current and low detectivity. Here, an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques. Compared with the reference device without interface, the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude, while the responsivity decreases slightly, thereby greatly improving the normalized photocurrent-to-dark current ratio. In addition, ZnO double-interface photodetector exhibits a much faster response speed (～ 0.65 s) than the no-interface device (～ 95 s). The improved performance is attributed to the potential barriers at the microwire—microwire homo-interfaces, which can regulate the carrier transport. Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.

关键词: ZnO microwire, interface, potential barrier, dark current, photocurrent-to-dark current ratio

Abstract: One-dimensional (1D) micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors. However, in the axial direction of micro/nanowires, the carriers can transport freely driven by an external electric field, which usually produces large dark current and low detectivity. Here, an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques. Compared with the reference device without interface, the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude, while the responsivity decreases slightly, thereby greatly improving the normalized photocurrent-to-dark current ratio. In addition, ZnO double-interface photodetector exhibits a much faster response speed (～ 0.65 s) than the no-interface device (～ 95 s). The improved performance is attributed to the potential barriers at the microwire—microwire homo-interfaces, which can regulate the carrier transport. Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.

Key words: ZnO microwire, interface, potential barrier, dark current, photocurrent-to-dark current ratio

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
61.72.uj (III-V and II-VI semiconductors) 61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 62.23.Hj (Nanowires)