A simple method to synthesize worm-like AlN nanowires and its field emission studies

doi:10.1088/1674-1056/abe3e7

中国物理B ›› 2021, Vol. 30 ›› Issue (8): 87302-087302.doi: 10.1088/1674-1056/abe3e7

A simple method to synthesize worm-like AlN nanowires and its field emission studies

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志)^†

Institute of New Energy Materials and Devices of Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing University of Technology, Beijing 100124, China

收稿日期:2020-12-18 修回日期:2021-01-25 接受日期:2021-02-07 出版日期:2021-07-16 发布日期:2021-07-20
通讯作者: Ru-Zhi Wang E-mail:wrz@bjut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11774017 and 51761135129).

A simple method to synthesize worm-like AlN nanowires and its field emission studies

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志)^†

Institute of New Energy Materials and Devices of Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing University of Technology, Beijing 100124, China

Received:2020-12-18 Revised:2021-01-25 Accepted:2021-02-07 Online:2021-07-16 Published:2021-07-20
Contact: Ru-Zhi Wang E-mail:wrz@bjut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11774017 and 51761135129).

摘要/Abstract

摘要： The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition (PECVD) on Si substrates through using Al powder and N₂ as precursors, CaF₂ as fluxing medium, Au as catalyst, respectively. The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure. Their diameters are about 300 nm, and the lengths are over 10 μm. The growth mechanism of worm-like AlN nanowires is discussed. Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires. The worm-like AlN nanowires exhibit an excellent field-emission (FE) property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm² and low threshold field of 9.9 V/μm at 1 mA/cm². The emission current densities of worm-like AlN nanowires each have a good stability. The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio. The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism. The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.

关键词: worm-like aluminum nitride nanowires, growth mechanism, plasma enhanced chemical vapor deposition, field-emission property

Abstract: The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition (PECVD) on Si substrates through using Al powder and N₂ as precursors, CaF₂ as fluxing medium, Au as catalyst, respectively. The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure. Their diameters are about 300 nm, and the lengths are over 10 μm. The growth mechanism of worm-like AlN nanowires is discussed. Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires. The worm-like AlN nanowires exhibit an excellent field-emission (FE) property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm² and low threshold field of 9.9 V/μm at 1 mA/cm². The emission current densities of worm-like AlN nanowires each have a good stability. The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio. The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism. The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.

Key words: worm-like aluminum nitride nanowires, growth mechanism, plasma enhanced chemical vapor deposition, field-emission property

中图分类号: (III-V semiconductors)

73.61.Ey

73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures) 81.05.-t (Specific materials: fabrication, treatment, testing, and analysis) 81.07.Gf (Nanowires)

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志). A simple method to synthesize worm-like AlN nanowires and its field emission studies[J]. 中国物理B, 2021, 30(8): 87302-087302.

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志). A simple method to synthesize worm-like AlN nanowires and its field emission studies[J]. Chin. Phys. B, 2021, 30(8): 87302-087302.

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A simple method to synthesize worm-like AlN nanowires and its field emission studies

A simple method to synthesize worm-like AlN nanowires and its field emission studies

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