Thermally induced band hybridization in bilayer-bilayer MoS2/WS2 heterostructure

doi:10.1088/1674-1056/abeee3

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 57801-057801.doi: 10.1088/1674-1056/abeee3

Thermally induced band hybridization in bilayer-bilayer MoS₂/WS₂ heterostructure

Yanchong Zhao(赵岩翀)^1,2, Tao Bo(薄涛)^1,3, Luojun Du(杜罗军)⁴, Jinpeng Tian(田金朋)^1,2, Xiaomei Li(李晓梅)^1,2, Kenji Watanabe⁵, Takashi Taniguchi⁶, Rong Yang(杨蓉)^1,3,7, Dongxia Shi(时东霞)^1,2,7,‡, Sheng Meng(孟胜)^1,2,3, Wei Yang(杨威)^1,2,3,7,§, and Guangyu Zhang(张广宇)^1,2,3,7,¶

1 Beijing National Laboratory for Condensed Matter Physics;Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
4 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland;
5 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;
6 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;
7 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China

收稿日期:2021-03-03 修回日期:2021-03-12 接受日期:2021-03-16 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Dongxia Shi, Wei Yang, Guangyu Zhang E-mail:dxshi@aphy.iphy.ac.cn;wei.yang@iphy.ac.cn;gyzhang@iphy.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2020YFA0309604), the National Natural Science Foundation of China (Grant Nos. 11834017, 61888102, and 12074413), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB33000000), the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001), and the Research Program of Beijing Academy of Quantum Information Sciences (Grant No. Y18G11).

Thermally induced band hybridization in bilayer-bilayer MoS₂/WS₂ heterostructure

1 Beijing National Laboratory for Condensed Matter Physics;Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
4 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland;
5 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;
6 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;
7 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China

Received:2021-03-03 Revised:2021-03-12 Accepted:2021-03-16 Online:2021-05-14 Published:2021-05-14
Contact: Dongxia Shi, Wei Yang, Guangyu Zhang E-mail:dxshi@aphy.iphy.ac.cn;wei.yang@iphy.ac.cn;gyzhang@iphy.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2020YFA0309604), the National Natural Science Foundation of China (Grant Nos. 11834017, 61888102, and 12074413), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB33000000), the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001), and the Research Program of Beijing Academy of Quantum Information Sciences (Grant No. Y18G11).

1. 2021-057801-SI.pdf(253KB)

摘要/Abstract

摘要： Transition metal dichalcogenides (TMDs), being valley selectively, are an ideal system hosting excitons. Stacking TMDs together to form heterostructure offers an exciting platform to engineer new optical and electronic properties in solid-state systems. However, due to the limited accuracy and repetitiveness of sample preparation, the effects of interlayer coupling on the electronic and excitonic properties have not been systematically investigated. In this report, we study the photoluminescence spectra of bilayer-bilayer MoS₂/WS₂ heterostructure with a type Ⅱ band alignment. We demonstrate that thermal annealing can increase interlayer coupling in the van der Waals heterostructures, and after thermally induced band hybridization such heterostructure behaves more like an artificial new solid, rather than just the combination of two individual TMD components. We also carry out experimental and theoretical studies of the electric controllable direct and indirect infrared interlayer excitons in such system. Our study reveals the impact of interlayer coupling on interlayer excitons and will shed light on the understanding and engineering of layer-controlled spin-valley configuration in twisted van der Waals heterostructures.

关键词: two-dimensional materials, transition metal dichalcogenides (TMDs) heterostructure, band hybridization, interlayer exciton

Abstract: Transition metal dichalcogenides (TMDs), being valley selectively, are an ideal system hosting excitons. Stacking TMDs together to form heterostructure offers an exciting platform to engineer new optical and electronic properties in solid-state systems. However, due to the limited accuracy and repetitiveness of sample preparation, the effects of interlayer coupling on the electronic and excitonic properties have not been systematically investigated. In this report, we study the photoluminescence spectra of bilayer-bilayer MoS₂/WS₂ heterostructure with a type Ⅱ band alignment. We demonstrate that thermal annealing can increase interlayer coupling in the van der Waals heterostructures, and after thermally induced band hybridization such heterostructure behaves more like an artificial new solid, rather than just the combination of two individual TMD components. We also carry out experimental and theoretical studies of the electric controllable direct and indirect infrared interlayer excitons in such system. Our study reveals the impact of interlayer coupling on interlayer excitons and will shed light on the understanding and engineering of layer-controlled spin-valley configuration in twisted van der Waals heterostructures.

Key words: two-dimensional materials, transition metal dichalcogenides (TMDs) heterostructure, band hybridization, interlayer exciton

中图分类号: (Optical properties of specific thin films)

78.66.-w

73.40.-c (Electronic transport in interface structures)

Yanchong Zhao(赵岩翀), Tao Bo(薄涛), Luojun Du(杜罗军), Jinpeng Tian(田金朋), Xiaomei Li(李晓梅), Kenji Watanabe, Takashi Taniguchi, Rong Yang(杨蓉), Dongxia Shi(时东霞), Sheng Meng(孟胜), Wei Yang(杨威), and Guangyu Zhang(张广宇). Thermally induced band hybridization in bilayer-bilayer MoS₂/WS₂ heterostructure[J]. 中国物理B, 2021, 30(5): 57801-057801.

参考文献

[1] Xiao D, Liu G B, Feng W, Xu X and Yao W 2012 Phys. Rev. Lett. 108 196802
[2] Mak K F, He K, Shan J and Heinz T F 2012 Nat. Nanotechnol. 7 494
[3] Zeng H, Dai J, Yao W, Xiao D and Cui X 2012 Nat. Nanotechnol. 7 490
[4] Zhu B, Zeng H, Dai J, Gong Z and Cui X 2014 Proc. Natl. Acad. Sci. USA 111 11606
[5] Kang J, Tongay S, Zhou J, Li J and Wu J 2013 Appl. Phys. Lett. 102 012111
[6] Terrones H, López-Urías F and Terrones M 2013 Sci. Rep. 3 1
[7] Kośmider K and Fernández-Rossier J 2013 Phys. Rev. B 87 075451
[8] Hong X, Kim J, Shi S F, Zhang Y, Jin C, Sun Y, Tongay S, Wu J, Zhang Y and Wang F 2014 Nat. Nanotechnol. 9 682
[9] Rivera P, Schaibley J R, Jones A M, Ross J S, Wu S, Aivazian G, Klement P, Seyler K, Clark G and Ghimire N J 2015 Nat. Commun. 6 1
[10] Cao Y, Fatemi V, Demir A, Fang S, Tomarken S L, Luo J Y, Sanchez-Yamagishi J D, Watanabe K, Taniguchi T and Kaxiras E 2018 Nature 556 80
[11] Cao Y, Fatemi V, Fang S, Watanabe K, Taniguchi T, Kaxiras E and Jarillo-Herrero P 2018 Nature 556 43
[12] Yu H, Wang Y, Tong Q, Xu X and Yao W 2015 Phys. Rev. Lett. 115 187002
[13] Yu H, Liu G, Tang J, Xu X and Yao W 2017 Sci. Adv. 3 e1701696
[14] Okada M, Kutana A, Kureishi Y, Kobayashi Y, Saito Y, Saito T, Watanabe K, Taniguchi T, Gupta S and Miyata Y 2018 ACS Nano 12 2498
[15] Jin C, Regan E C, Yan A, Utama M I B, Wang D, Zhao S, Qin Y, Yang S, Zheng Z and Shi S 2019 Nature 567 76
[16] Tran K, Moody G, Wu F, Lu X, Choi J, Kim K, Rai A, Sanchez D A, Quan J and Singh A 2019 Nature 567 71
[17] Seyler K L, Rivera P, Yu H, Wilson N P, Ray E L, Mandrus D G, Yan J, Yao W and Xu X 2019 Nature 567 66
[18] Alexeev E M, Ruiz-Tijerina D A, Danovich M, Hamer M J, Terry D J, Nayak P K, Ahn S, Pak S, Lee J and Sohn J I 2019 Nature 567 81
[19] Rivera P, Yu H, Seyler K L, Wilson N P, Yao W and Xu X 2018 Nat. Nanotechnol. 13 1004
[20] Kiemle J, Sigger F, Lorke M, Miller B, Watanabe K, Taniguchi T, Holleitner A and Wurstbauer U 2020 Phys. Rev. B 101 121404
[21] Karni O, Barré E, Lau S C, Gillen R, Ma E Y, Kim B, Watanabe K, Taniguchi T, Maultzsch J and Barmak K 2019 Phys. Rev. Lett. 123 247402
[22] Kunstmann J, Mooshammer F, Nagler P, Chaves A, Stein F, Paradiso N, Plechinger G, Strunk C, Schüller C and Seifert G 2018 Nat. Phys. 14 801
[23] Pizzocchero F, Gammelgaard L, Jessen B S, Caridad J M, Wang L, Hone J, Boggild P and Booth T J 2016 Nat. Commun. 7 11894
[24] Zomer P J, Guimarães M H D, Brant J C, Tombros N and van Wees B J 2014 Appl. Phys. Lett. 105 013101
[25] Wang D, Chen G, Li C, Cheng M, Yang W, Wu S, Xie G, Zhang J, Zhao J and Lu X 2016 Phys. Rev. Lett. 116 126101
[26] Cheiwchanchamnangij T and Lambrecht W R L 2012 Phys. Rev. B 85 205302
[27] Zhao W, Ghorannevis Z, Chu L, Toh M, Kloc C, Tan P H and Eda G 2013 ACS Nano 7 791
[28] Zhao W, Ribeiro R M, Toh M, Carvalho A, Kloc C, Castro Neto A H and Eda G 2013 Nano Lett. 13 5627
[29] Miller D A B, Chemla D S, Damen T C, Gossard A C, Wiegmann W, Wood T H and Burrus C A 1984 Phys. Rev. Lett. 53 2173
[30] Wilson N R, Nguyen P V, Seyler K, Rivera P, Marsden A J, Laker Z P, Constantinescu G C, Kandyba V, Barinov A, Hine N D, Xu X and Cobden D H 2017 Sci. Adv. 3 e1601832
[31] Van der Donck M and Peeters F M 2018 Phys. Rev. B 98 115104
[32] Yu H, Liu G B and Yao W 2018 2D Mater. 5 035021
[33] Zhu B, Zeng H, Dai J, Gong Z and Cui X 2014 Proc. Natl. Acad. Sci. USA 111 11606
[34] Jones A M, Yu H, Ross J S, Klement P, Ghimire N J, Yan J, Mandrus D G, Yao W and Xu X 2014 Nat. Phys. 10 130
[35] Wang G, Marie X, Bouet L, Vidal M, Balocchi A, Amand T, Lagarde D and Urbaszek B 2014 Appl. Phys. Lett. 105 182105
[36] Cheng Y, Huang C, Hong H, Zhao Z and Liu K 2019 Chin. Phys. B 28 107304

Thermally induced band hybridization in bilayer-bilayer MoS₂/WS₂ heterostructure

Thermally induced band hybridization in bilayer-bilayer MoS₂/WS₂ heterostructure

RichHTML

PDF (PC)

赞

补充材料

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Ming Yan(闫明), Zhi-Yuan Xie(谢志远), and Miao Gao(高淼). High-temperature ferromagnetism and strong π-conjugation feature in two-dimensional manganese tetranitride[J]. 中国物理B, 2023, 32(3): 37104-037104.
[2]	Xiao-Fang Ouyang(欧阳小芳) and Lu Wang(王路). Half-metallicity induced by out-of-plane electric field on phosphorene nanoribbons[J]. 中国物理B, 2022, 31(7): 77304-077304.
[3]	Kejian Liu(刘可鉴), Jian Li(李健), Qing-Xu Li(李清旭), and Jia-Ji Zhu(朱家骥). Anisotropic plasmon dispersion and damping in multilayer 8-Pmmn borophene structures[J]. 中国物理B, 2022, 31(11): 117303-117303.
[4]	Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科). Epitaxy of III-nitrides on two-dimensional materials and its applications[J]. 中国物理B, 2022, 31(11): 117702-117702.
[5]	Lijun Wu(吴莉君), Cuihuan Ge(葛翠环), Kai Braun, Mai He(贺迈), Siman Liu(刘思嫚), Qingjun Tong(童庆军), Xiao Wang(王笑), and Anlian Pan(潘安练). Polarized photoluminescence spectroscopy in WS₂, WSe₂ atomic layers and heterostructures by cylindrical vector beams[J]. 中国物理B, 2021, 30(8): 87802-087802.
[6]	Yi-Di Pang(庞奕荻), En-Xiu Wu(武恩秀), Zhi-Hao Xu(徐志昊), Xiao-Dong Hu(胡晓东), Sen Wu(吴森), Lin-Yan Xu(徐临燕), and Jing Liu(刘晶). Effect of electrical contact on performance of WSe₂ field effect transistors[J]. 中国物理B, 2021, 30(6): 68501-068501.
[7]	Chun Zhou(周淳), Junchao Huang(黄俊超), and Xiangmei Duan(段香梅). Two-dimensional PC₃ as a promising anode material for potassium-ion batteries: First-principles calculations[J]. 中国物理B, 2021, 30(5): 56801-056801.
[8]	Yuanjie Chen(陈元杰), Shaoyun Huang(黄少云), Jingwei Mu(慕经纬), Dong Pan(潘东), Jianhua Zhao(赵建华), and Hong-Qi Xu(徐洪起). A double quantum dot defined by top gates in a single crystalline InSb nanosheet[J]. 中国物理B, 2021, 30(12): 128501-128501.
[9]	Xiaolong Feng(冯晓龙), Jiaojiao Zhu(朱娇娇), Weikang Wu(吴维康), and Shengyuan A. Yang(杨声远). Two-dimensional topological semimetals[J]. 中国物理B, 2021, 30(10): 107304-107304.
[10]	严长林, 王聪, 周霖蔚, 郭朋杰, 刘凯, 卢仲毅, 程志海, 柴扬, 潘安练, 季威. Two ultra-stable novel allotropes of tellurium few-layers[J]. 中国物理B, 2020, 29(9): 97103-097103.
[11]	侯延辉, 张腾, 孙家涛, 刘立巍, 姚裕贵, 王业亮. Progress on 2D topological insulators and potential applications in electronic devices[J]. 中国物理B, 2020, 29(9): 97304-097304.
[12]	洪浩, 程阳, 吴春春, 黄琛, 刘灿, 于文韬, 周旭, 马超杰, 王金焕, 张智宏, 赵芸, 熊杰, 刘开辉. Modulation of carrier lifetime in MoS₂ monolayer by uniaxial strain[J]. 中国物理B, 2020, 29(7): 77201-077201.
[13]	徐龙翔, 吕文刚, 胡晨, 郭奇勋, 尚帅, 徐秀兰, 于广华, 岩雨, 王立华, 滕蛟. Improvement of valley splitting and valley injection efficiency for graphene/ferromagnet heterostructure[J]. 中国物理B, 2020, 29(7): 77304-077304.
[14]	盖彦峰, 刘永. Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide[J]. 中国物理B, 2019, 28(7): 77104-077104.
[15]	马新莉, 张荣杰, 安春华, 吴森, 胡晓东, 刘晶. Efficient doping modulation of monolayer WS₂ for optoelectronic applications[J]. 中国物理B, 2019, 28(3): 37803-037803.