Synthesis and thermoelectric properties of Bi-doped SnSe thin films

doi:10.1088/1674-1056/ac11da

中国物理B ›› 2021, Vol. 30 ›› Issue (11): 116302-116302.doi: 10.1088/1674-1056/ac11da

Synthesis and thermoelectric properties of Bi-doped SnSe thin films

Jun Pang(庞军), Xi Zhang(张析)^†, Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢)^‡

College of Physics, Sichuan University, Chengdu 610064, China

收稿日期:2021-02-16 修回日期:2021-06-19 接受日期:2021-07-07 出版日期:2021-10-13 发布日期:2021-11-03
通讯作者: Xi Zhang, Gang Xiang E-mail:xizhang@scu.edu.cn;gxiang@scu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0405702) and the National Natural Science Foundation of China (Grant No. 51672179).

Synthesis and thermoelectric properties of Bi-doped SnSe thin films

Jun Pang(庞军), Xi Zhang(张析)^†, Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢)^‡

College of Physics, Sichuan University, Chengdu 610064, China

Received:2021-02-16 Revised:2021-06-19 Accepted:2021-07-07 Online:2021-10-13 Published:2021-11-03
Contact: Xi Zhang, Gang Xiang E-mail:xizhang@scu.edu.cn;gxiang@scu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0405702) and the National Natural Science Foundation of China (Grant No. 51672179).

摘要/Abstract

摘要： Bi doped n-type SnSe thin films were prepared by chemical vapor deposition (CVD) and their structure and thermoelectric properties were studied. The x-ray diffraction patterns, x-ray photoelectron spectroscopy, and microscopic images show that the prepared SnSe thin films were composed of pure SnSe crystals. The Seebeck coefficients of the Bi-doped SnSe were greatly improved compared to that of undoped SnSe thin films. Specifically, Sn_0.99Bi_0.01Se thin film exhibited a Seebeck coefficient of -905.8μV·K^-1 at 600 K, much higher than 285.5 μV·K^-1 of undoped SnSe thin film. Further first-principles calculations reveal that the enhancement of the thermoelectric properties can be explained mainly by the Fermi level lifting and the carrier pockets increasing near the Fermi level due to Bi doping in the SnSe samples. Our results suggest the potentials of the Bi-doped SnSe thin films in thermoelectric applications.

关键词: SnSe thin films, Bi doping, thermoelectric properties, Seebeck coefficient

Abstract: Bi doped n-type SnSe thin films were prepared by chemical vapor deposition (CVD) and their structure and thermoelectric properties were studied. The x-ray diffraction patterns, x-ray photoelectron spectroscopy, and microscopic images show that the prepared SnSe thin films were composed of pure SnSe crystals. The Seebeck coefficients of the Bi-doped SnSe were greatly improved compared to that of undoped SnSe thin films. Specifically, Sn_0.99Bi_0.01Se thin film exhibited a Seebeck coefficient of -905.8μV·K^-1 at 600 K, much higher than 285.5 μV·K^-1 of undoped SnSe thin film. Further first-principles calculations reveal that the enhancement of the thermoelectric properties can be explained mainly by the Fermi level lifting and the carrier pockets increasing near the Fermi level due to Bi doping in the SnSe samples. Our results suggest the potentials of the Bi-doped SnSe thin films in thermoelectric applications.

Key words: SnSe thin films, Bi doping, thermoelectric properties, Seebeck coefficient

中图分类号: (First-principles theory)

63.20.dk

73.50.Lw (Thermoelectric effects) 68.35.bg (Semiconductors)

Jun Pang(庞军), Xi Zhang(张析), Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢). Synthesis and thermoelectric properties of Bi-doped SnSe thin films[J]. 中国物理B, 2021, 30(11): 116302-116302.

Jun Pang(庞军), Xi Zhang(张析), Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢). Synthesis and thermoelectric properties of Bi-doped SnSe thin films[J]. Chin. Phys. B, 2021, 30(11): 116302-116302.

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Synthesis and thermoelectric properties of Bi-doped SnSe thin films

Synthesis and thermoelectric properties of Bi-doped SnSe thin films

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