Super deformability and thermoelectricity of bulk γ-InSe single crystals

doi:10.1088/1674-1056/abf133

中国物理B ›› 2021, Vol. 30 ›› Issue (7): 78101-078101.doi: 10.1088/1674-1056/abf133

Super deformability and thermoelectricity of bulk γ-InSe single crystals

Bin Zhang(张斌)¹, Hong Wu(吴宏)², Kunling Peng(彭坤岭)², Xingchen Shen(沈星辰)², Xiangnan Gong(公祥南)¹, Sikang Zheng(郑思康)², Xu Lu(卢旭)², Guoyu Wang(王国玉)⁴, and Xiaoyuan Zhou(周小元)^1,2,†

1 Analytical and Testing Center of Chongqing University, Chongqing 401331, China;
2 Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, China;
3 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;
4 University of Chinese Academy of Sciences, Beijing 100044, China

收稿日期:2021-01-29 修回日期:2021-03-16 接受日期:2021-03-24 出版日期:2021-06-22 发布日期:2021-06-24
通讯作者: Xiaoyuan Zhou E-mail:xiaoyuan2013@cqu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11674040, 11604032, 51472036, 51672270, and 11904039), the Fundamental Research Funds for the Central Universities, China (Grant No. 106112016CDJZR308808), and Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH016).

Super deformability and thermoelectricity of bulk γ-InSe single crystals

1 Analytical and Testing Center of Chongqing University, Chongqing 401331, China;
2 Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, China;
3 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;
4 University of Chinese Academy of Sciences, Beijing 100044, China

Received:2021-01-29 Revised:2021-03-16 Accepted:2021-03-24 Online:2021-06-22 Published:2021-06-24
Contact: Xiaoyuan Zhou E-mail:xiaoyuan2013@cqu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11674040, 11604032, 51472036, 51672270, and 11904039), the Fundamental Research Funds for the Central Universities, China (Grant No. 106112016CDJZR308808), and Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH016).

1. 2021-078101-SI.pdf(1609KB)

摘要/Abstract

摘要： Indium selenide, a Ⅲ-V group semiconductor with layered structure, attracts intense attention in various photoelectric applications, due to its outstanding properties. Here, we report super deformability and thermoelectricity of γ-InSe single crystals grown by modified Bridgeman method. The crystal structure of InSe is studied systematically by transmission electron microscopy methods combined with x-ray diffraction and Raman spectroscopy. The predominate phase of γ-InSe with dense stacking faults and local multiphases is directly demonstrated at atomic scale. The bulk γ-InSe crystals demonstrate surprisingly high intrinsic super deformative ability which is highly pliable with bending strains exceeding 12.5% and 264% extension by rolling. At the meantime, InSe also possesses graphite-like features which is printable, writable, and erasable. Finally, the thermoelectric properties of γ-InSe bulk single crystals are preliminary studied and thermal conductivity can be further reduced via bending-induced defects. These findings will enrich the knowledge of structural and mechanical properties' flexibility of InSe and shed lights on the intrinsic and unique mechanical properties of InSe polytypes.

关键词: γ-InSe single crystals, structure identification, super deformability, thermoelectric properties

Abstract: Indium selenide, a Ⅲ-V group semiconductor with layered structure, attracts intense attention in various photoelectric applications, due to its outstanding properties. Here, we report super deformability and thermoelectricity of γ-InSe single crystals grown by modified Bridgeman method. The crystal structure of InSe is studied systematically by transmission electron microscopy methods combined with x-ray diffraction and Raman spectroscopy. The predominate phase of γ-InSe with dense stacking faults and local multiphases is directly demonstrated at atomic scale. The bulk γ-InSe crystals demonstrate surprisingly high intrinsic super deformative ability which is highly pliable with bending strains exceeding 12.5% and 264% extension by rolling. At the meantime, InSe also possesses graphite-like features which is printable, writable, and erasable. Finally, the thermoelectric properties of γ-InSe bulk single crystals are preliminary studied and thermal conductivity can be further reduced via bending-induced defects. These findings will enrich the knowledge of structural and mechanical properties' flexibility of InSe and shed lights on the intrinsic and unique mechanical properties of InSe polytypes.

Key words: γ-InSe single crystals, structure identification, super deformability, thermoelectric properties

中图分类号: (Growth from melts; zone melting and refining)

81.10.Fq

84.60.Rb (Thermoelectric, electrogasdynamic and other direct energy conversion)

Bin Zhang(张斌), Hong Wu(吴宏), Kunling Peng(彭坤岭), Xingchen Shen(沈星辰), Xiangnan Gong(公祥南), Sikang Zheng(郑思康), Xu Lu(卢旭), Guoyu Wang(王国玉), and Xiaoyuan Zhou(周小元). Super deformability and thermoelectricity of bulk γ-InSe single crystals[J]. 中国物理B, 2021, 30(7): 78101-078101.

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Super deformability and thermoelectricity of bulk γ-InSe single crystals

Super deformability and thermoelectricity of bulk γ-InSe single crystals

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