中国物理B ›› 2020, Vol. 29 ›› Issue (4): 40703-040703.doi: 10.1088/1674-1056/ab7806
所属专题: SPECIAL TOPIC — Physics in neuromorphic devices
• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇 下一篇
Hai Zhong(钟海), Qin-Chao Sun(孙勤超), Guo Li(李果), Jian-Yu Du(杜剑宇), He-Yi Huang(黄河意), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Chen Ge(葛琛), Kui-Juan Jin(金奎娟)
收稿日期:
2020-01-10
修回日期:
2020-02-15
出版日期:
2020-04-05
发布日期:
2020-04-05
通讯作者:
Chen Ge, Kui-Juan Jin
E-mail:gechen@iphy.ac.cn;kjjin@iphy.ac.cn
基金资助:
Hai Zhong(钟海)1, Qin-Chao Sun(孙勤超)1, Guo Li(李果)1, Jian-Yu Du(杜剑宇)1,2, He-Yi Huang(黄河意)1,2, Er-Jia Guo(郭尔佳)1,3, Meng He(何萌)1, Can Wang(王灿)1,2,4, Guo-Zhen Yang(杨国桢)1, Chen Ge(葛琛)1,2, Kui-Juan Jin(金奎娟)1,2,4
Received:
2020-01-10
Revised:
2020-02-15
Online:
2020-04-05
Published:
2020-04-05
Contact:
Chen Ge, Kui-Juan Jin
E-mail:gechen@iphy.ac.cn;kjjin@iphy.ac.cn
Supported by:
摘要: The further development of traditional von Neumann-architecture computers is limited by the breaking of Moore's law and the von Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI) systems. Therefore, new computing paradigms are desperately needed. Inspired by the human brain, neuromorphic computing is proposed to realize AI while reducing power consumption. As one of the basic hardware units for neuromorphic computing, artificial synapses have recently aroused worldwide research interests. Among various electronic devices that mimic biological synapses, synaptic transistors show promising properties, such as the ability to perform signal transmission and learning simultaneously, allowing dynamic spatiotemporal information processing applications. In this article, we provide a review of recent advances in electrolyte- and ferroelectric-gated synaptic transistors. Their structures, materials, working mechanisms, advantages, and disadvantages will be presented. In addition, the challenges of developing advanced synaptic transistors are discussed.
中图分类号: (Neural networks, fuzzy logic, artificial intelligence)
钟海, 孙勤超, 李果, 杜剑宇, 黄河意, 郭尔佳, 何萌, 王灿, 杨国桢, 葛琛, 金奎娟. High-performance synaptic transistors for neuromorphic computing[J]. 中国物理B, 2020, 29(4): 40703-040703.
Hai Zhong(钟海), Qin-Chao Sun(孙勤超), Guo Li(李果), Jian-Yu Du(杜剑宇), He-Yi Huang(黄河意), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Chen Ge(葛琛), Kui-Juan Jin(金奎娟). High-performance synaptic transistors for neuromorphic computing[J]. Chin. Phys. B, 2020, 29(4): 40703-040703.
[1] |
Kuzum D, Yu S and Philip Wong H S 2013 Nanotechnology 24 382001
doi: 10.1088/0957-4484/24/38/382001 |
[2] |
He Y, Yang Y, Nie S, Liu R and Wan Q 2018 J. Mater. Chem. C 6 5336
doi: 10.1039/C8TC00530C |
[3] |
Tang J, Yuan F, Shen X, Wang Z, Rao M, He Y, Sun Y, Li X, Zhang W, Li Y, Gao B, Qian H, Bi G, Song S, Yang J J and Wu H 2019 Adv. Mater. 31 1902761
doi: 10.1002/adma.201902761 |
[4] |
Drachman D A 2005 Neurology 64 2004
doi: 10.1212/01.WNL.0000166914.38327.BB |
[5] |
Zucker R S and Regehr W G 2002 Annu. Rev. Physiol. 64 355
doi: 10.1146/annurev.physiol.64.092501.114547 |
[6] |
Smith A J, Owens S and Forsythe I D 2000 J. Physiol. 529 681
doi: 10.1111/j.1469-7793.2000.00681.x |
[7] |
Bi G Q and Poo M M 1998 J. Neurosci. 18 10464
doi: 10.1523/JNEUROSCI.18-24-10464.1998 |
[8] |
Rogers R R, Krause D W and Curry Rogers K 2003 Nature 422 515
doi: 10.1038/nature01532 |
[9] | Markram H, Gerstner W and Sjöström P J 2012 Front. Synaptic Neurosci. 4 2 |
[10] |
Rotman Z, Deng P Y and Klyachko V A 2011 J. Neurosci. 31 14800
doi: 10.1523/JNEUROSCI.3231-11.2011 |
[11] |
Kim M K and Lee J S 2018 ACS Nano 12 1680
doi: 10.1021/acsnano.7b08331 |
[12] |
Lamprecht R and LeDoux J 2004 Nat. Rev. Neurosci. 5 45
doi: 10.1038/nrn1301 |
[13] |
Abbott L F and Regehr W G 2004 Nature 431 796
doi: 10.1038/nature03010 |
[14] |
Fuller E J, Keene S T, Melianas A, Wang Z, Agarwal S, Li Y, Tuchman Y, James C D, Marinella M J, Yang J J, Salleo A and Talin A A 2019 Science 364 570
doi: 10.1126/science.aaw5581 |
[15] |
van de Burgt Y, Melianas A, Keene S T, Malliaras G and Salleo A 2018 Nat. Electron. 1 386
doi: 10.1038/s41928-018-0103-3 |
[16] |
Upadhyay N K, Jiang H, Wang Z, Asapu S, Xia Q and Joshua Yang J 2019 Adv. Mater. Technol. 4 1800589
doi: 10.1002/admt.201800589 |
[17] |
Wan Q, Sharbati M T, Erickson J R, Du Y and Xiong F 2019 Adv. Mater. Technol. 4 1900037
doi: 10.1002/admt.201900037 |
[18] |
Esser S K, Merolla P A, Arthur J V, Cassidy A S, Appuswamy R, Andreopoulos A, Berg D J, McKinstry J L, Melano T, Barch D R, di Nolfo C, Datta P, Amir A, Taba B, Flickner M D and Modha D S 2016 Proc. Natl. Acad. Sci. USA 113 11441
doi: 10.1073/pnas.1604850113 |
[19] |
Yang C S, Shang D S, Liu N, Fuller E J, Agrawal S, Talin A A, Li Y Q, Shen B G and Sun Y 2018 Adv. Funct. Mater. 28 1804170
doi: 10.1002/adfm.201804170 |
[20] |
Wang J and Zhuge F 2019 Adv. Mater. Technol. 4 1800544
doi: 10.1002/admt.201800544 |
[21] |
Li J K, Ge C, Lu H T, Guo H Z, Guo E J, He M, Wang C, Yang G Z and Jin K J 2019 ACS Appl. Mater. Interfaces 11 43473
doi: 10.1021/acsami.9b13434 |
[22] |
Davies M, Srinivasa N, Lin T, Chinya G, Cao Y, Choday S H, Dimou G, Joshi P, Imam N, Jain S, Liao Y, Lin C, Lines A, Liu R, Mathaikutty D, McCoy S, Paul A, Tse J, Venkataramanan G, Weng Y, Wild A, Yang Y and Wang H 2018 IEEE Micro 38 82
doi: 10.1109/MM.2018.112130359 |
[23] |
Yang J J, Strukov D B and Stewart D R 2013 Nat. Nanotechnol. 8 13
doi: 10.1038/nnano.2012.240 |
[24] | Burr G W, Shelby R M, Sebastian A, Kim S, Kim S, Sidler S, Virwani K, Ishii M, Narayanan P, Fumarola A, Sanches L L, Boybat I, Le Gallo M, Moon K, Woo J, Hwang H and Leblebici Y 2016 Adv. Phys. X 2 89 |
[25] |
Prezioso M, Merrikh-Bayat F, Hoskins B D, Adam G C, Likharev K K and Strukov D B 2015 Nature 521 61
doi: 10.1038/nature14441 |
[26] |
Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P and Lu W 2010 Nano Lett. 10 1297
doi: 10.1021/nl904092h |
[27] | Chen Y H, Xu W, Wang Y Q, Wang X, Li Y F, Liang D K, Lu L Q, Liu X W, Lian X J, Hu E T, Guo Y F, Xu J G, Tong Y and Xiao J 2019 Acta. Phys. Sin. 68 098501 (in Chinese) |
[28] |
Wang S P, He C L, Tang J, Yang R, Shi D X and Zhang G Y 2019 Chin. Phys. B 28 017304
doi: 10.1088/1674-1056/28/1/017304 |
[29] |
Tuma T, Pantazi A, Le Gallo M, Sebastian A and Eleftheriou E 2016 Nat. Nanotechnol. 11 693
doi: 10.1038/nnano.2016.70 |
[30] |
Chanthbouala A, Garcia V, Cherifi R O, Bouzehouane K, Fusil S, Moya X, Xavier S, Yamada H, Deranlot C, Mathur N D, Bibes M, Barthélémy A and Grollier J 2012 Nat. Mater. 11 860
doi: 10.1038/nmat3415 |
[31] |
Vincent A F, Larroque J, Locatelli N, Romdhane N B, Bichler O, Gamrat C, Zhao W S, Klein J, Galdin-Retailleau S and Querlioz D 2015 IEEE Trans. Biomed. Circuits Syst. 9 166
doi: 10.1109/TBCAS.2015.2414423 |
[32] |
Zhong H, Wen Y, Zhao Y, Zhang Q, Huang Q, Chen Y, Cai J, Zhang X, Li R W, Bai L, Kang S, Yan S and Tian Y 2019 Adv. Funct. Mater. 29 1806460
doi: 10.1002/adfm.201806460 |
[33] |
Zidan M A, Strachan J P and Lu W D 2018 Nat. Electron. 1 22
doi: 10.1038/s41928-017-0006-8 |
[34] |
Zuo F, Panda P, Kotiuga M, Li J, Kang M, Mazzoli C, Zhou H, Barbour A, Wilkins S, Narayanan B, Cherukara M, Zhang Z, Sankaranarayanan S K R S, Comin R, Rabe K M, Roy K and Ramanathan S 2017 Nat. Commun. 8 240
doi: 10.1038/s41467-017-00248-6 |
[35] |
Dai S, Zhao Y, Wang Y, Zhang J, Fang L, Jin S, Shao Y and Huang J 2019 Adv. Funct. Mater. 29 1903700
doi: 10.1002/adfm.201903700 |
[36] |
Chen Y, Yu H, Gong J, Ma M, Han H, Wei H and Xu W 2019 Nanotechnology 30 012001
doi: 10.1088/1361-6528/aae470 |
[37] |
Han H, Yu H, Wei H, Gong J and Xu W 2019 Small 15 1900695
doi: 10.1002/smll.201900695 |
[38] |
Nishitani Y, Kaneko Y, Ueda M, Morie T and Fujii E 2012 J. Appl. Phys. 111 124108
doi: 10.1063/1.4729915 |
[39] |
Sun J, Oh S, Choi Y, Seo S, Oh M J, Lee M, Lee W B, Yoo P J, Cho J H and Park J H 2018 Adv. Funct. Mater. 28 1804397
doi: 10.1002/adfm.201804397 |
[40] |
Wan C J, Zhu L Q, Zhou J M, Shi Y and Wan Q 2014 Nanoscale 6 4491
doi: 10.1039/C3NR05882D |
[41] |
Wan X, Yang Y, Feng P, Shi Y and Wan Q 2016 IEEE Electron Device Lett. 37 299
doi: 10.1109/LED.2016.2517080 |
[42] |
Shao F, Feng P, Wan C, Wan X, Yang Y, Shi Y and Wan Q 2017 Adv. Electron. Mater. 3 1600509
doi: 10.1002/aelm.201600509 |
[43] |
Leighton C 2019 Nat. Mater. 18 13
doi: 10.1038/s41563-018-0246-7 |
[44] |
Ren Y, Yang X, Zhou L, Mao J Y, Han S T and Zhou Y 2019 Adv. Funct. Mater. 29 1902105
doi: 10.1002/adfm.201902105 |
[45] | Yu F and Zhu L Q 2019 Phys. Status Solidi Rapid Res. Lett. 13 1800674 |
[46] |
Jang S, Jang S, Lee E H, Kang M, Wang G and Kim T W 2019 ACS Appl. Mater. Interfaces 11 1071
doi: 10.1021/acsami.8b12092 |
[47] |
Takagi H 2000 Neurosci. Res. 37 167
doi: 10.1016/S0168-0102(00)00120-6 |
[48] |
Fioravante D and Regehr W G 2011 Curr. Opin. Neurobiol. 21 269
doi: 10.1016/j.conb.2011.02.003 |
[49] |
Jackman S L, Turecek J, Belinsky J E and Regehr W G 2016 Nature 529 88
doi: 10.1038/nature16507 |
[50] |
Debanne D, Guérineau N C, Gähwiler B H and Thompson S M 1996 J. Physiol. 491 163
doi: 10.1113/jphysiol.1996.sp021204 |
[51] |
Sullivan J M 2007 J. Neurophysiol. 97 948
doi: 10.1152/jn.00554.2006 |
[52] |
Waldeck R F, Pereda A and Faber D S 2000 J. Neurosci. 20 5312
doi: 10.1523/JNEUROSCI.20-14-05312.2000 |
[53] |
Thompson R 1986 Science 233 941
doi: 10.1126/science.3738519 |
[54] |
Ling H, Wang N, Yang A, Liu Y, Song J and Yan F 2019 Adv. Mater. Technol. 4 1900471
doi: 10.1002/admt.201900471 |
[55] |
Bear M F and Abraham W C 1996 Annu. Rev. Neurosci. 19 437
doi: 10.1146/annurev.ne.19.030196.002253 |
[56] |
Kullmann D M and Lamsa K P 2007 Nat. Rev. Neurosci. 8 687
doi: 10.1038/nrn2207 |
[57] |
Bear M F and Malenka R C 1994 Curr. Opin. Neurobiol. 4 389
doi: 10.1016/0959-4388(94)90101-5 |
[58] |
Bliss T V P and Collingridge G L 1993 Nature 361 31
doi: 10.1038/361031a0 |
[59] |
Bi G Q and Poo M M 2001 Annu. Rev. Neurosci. 24 139
doi: 10.1146/annurev.neuro.24.1.139 |
[60] |
Feldman Daniel E 2012 Neuron 75 556
doi: 10.1016/j.neuron.2012.08.001 |
[61] |
Song S and Abbott L F 2001 Neuron 32 339
doi: 10.1016/S0896-6273(01)00451-2 |
[62] |
Wang Z, Joshi S, Savel'ev S E, Jiang H, Midya R, Lin P, Hu M, Ge N, Strachan J P, Li Z, Wu Q, Barnell M, Li G L, Xin H L, Williams R S, Xia Q and Yang J J 2017 Nat. Mater. 16 101
doi: 10.1038/nmat4756 |
[63] |
Kent A D and Worledge D C 2015 Nat. Nanotechnol. 10 187
doi: 10.1038/nnano.2015.24 |
[64] |
Xia Q, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G and Williams R S 2009 Nano Lett. 9 3640
doi: 10.1021/nl901874j |
[65] |
Ge C, Li G, Zhou Q L, Du J Y, Guo E J, He M, Wang C, Yang G Z and Jin K J 2020 Nano Energy 67 104268
doi: 10.1016/j.nanoen.2019.104268 |
[66] |
Yao Y, Huang X, Peng S, Zhang D, Shi J, Yu G, Liu Q and Jin Z 2019 Adv. Electron. Mater. 5 1800887
doi: 10.1002/aelm.201800887 |
[67] |
Oh C, Jo M and Son J 2019 ACS Appl. Mater. Interfaces 11 15733
doi: 10.1021/acsami.9b00392 |
[68] |
Jiang J, Guo J, Wan X, Yang Y, Xie H, Niu D, Yang J, He J, Gao Y and Wan Q 2017 Small 13 1700933
doi: 10.1002/smll.201700933 |
[69] |
Yang Y, Wen J, Guo L, Wan X, Du P, Feng P, Shi Y and Wan Q 2016 ACS Appl. Mater. Interfaces 8 30281
doi: 10.1021/acsami.6b08515 |
[70] |
Yang C S, Shang D S, Liu N, Shi G, Shen X, Yu R C, Li Y Q and Sun Y 2017 Adv. Mater. 29 1700906
doi: 10.1002/adma.201700906 |
[71] |
Zhu J, Yang Y, Jia R, Liang Z, Zhu W, Rehman Z U, Bao L, Zhang X, Cai Y, Song L and Huang R 2018 Adv. Mater. 30 1800195
doi: 10.1002/adma.201800195 |
[72] |
Sharbati M T, Du Y, Torres J, Ardolino N D, Yun M and Xiong F 2018 Adv. Mater. 30 1802353
doi: 10.1002/adma.201802353 |
[73] |
Fuller E J, Gabaly F E, Léonard F, Agarwal S, Plimpton S J, Jacobs-Gedrim R B, James C D, Marinella M J and Talin A A 2017 Adv. Mater. 29 1604310
doi: 10.1002/adma.201604310 |
[74] |
Shi J, Ha S D, Zhou Y, Schoofs F and Ramanathan S 2013 Nat. Commun. 4 2676
doi: 10.1038/ncomms3676 |
[75] |
Ge C, Liu C X, Zhou Q L, Zhang Q H, Du J Y, Li J K, Wang C, Gu L, Yang G Z and Jin K J 2019 Adv. Mater. 31 1900379
doi: 10.1002/adma.201900379 |
[76] |
Huang H Y, Ge C, Zhang Q H, Liu C X, Du J Y, Li J K, Wang C, Gu L, Yang G Z and Jin K J 2019 Adv. Funct. Mater. 29 1902702
doi: 10.1002/adfm.201902702 |
[77] |
Ge C, Jin K J, Gu L, Peng L C, Hu Y S, Guo H Z, Shi H F, Li J K, Wang J O, Guo X X, Wang C, He M, Lu H B and Yang G Z 2015 Adv. Mater. Interfaces 2 1500407
doi: 10.1002/admi.201500407 |
[78] |
Yang J T, Ge C, Du J Y, Huang H Y, He M, Wang C, Lu H B, Yang G Z and Jin K J 2018 Adv. Mater. 30 1801548
doi: 10.1002/adma.201801548 |
[79] |
Jin K J, Lu H B, Zhou Q L, Zhao K, Cheng B L, Chen Z H, Zhou Y L and Yang G Z 2005 Phys. Rev. B 71 184428
doi: 10.1103/PhysRevB.71.184428 |
[80] |
Jin K J, Lu H B, Zhao K, Ge C, He M and Yang G Z 2009 Adv. Mater. 21 4636
doi: 10.1002/adma.200901046 |
[81] |
van de Burgt Y, Lubberman E, Fuller E J, Keene S T, Faria G C, Agarwal S, Marinella M J, Alec Talin A and Salleo A 2017 Nat. Mater. 16 414
doi: 10.1038/nmat4856 |
[82] |
Wu G, Feng P, Wan X, Zhu L, Shi Y and Wan Q 2016 Sci. Rep. 6 23578
doi: 10.1038/srep23578 |
[83] |
Liu Y H, Zhu L Q, Feng P, Shi Y and Wan Q 2015 Adv. Mater. 27 5599
doi: 10.1002/adma.201502719 |
[84] |
Lai Q, Zhang L, Li Z, Stickle W F, Williams R S and Chen Y 2010 Adv. Mater. 22 2448
doi: 10.1002/adma.201000282 |
[85] |
Lu N, Zhang P, Zhang Q, Qiao R, He Q, Li H B, Wang Y, Guo J, Zhang D, Duan Z, Li Z, Wang M, Yang S, Yan M, Arenholz E, Zhou S, Yang W, Gu L, Nan C W, Wu J, Tokura Y and Yu P 2017 Nature 546 124
doi: 10.1038/nature22389 |
[86] |
Go J, Kim Y, Kwak M, Song J, Chekol S A, Kwon J D and Hwang H 2019 Appl. Phys. Express 12 026503
doi: 10.7567/1882-0786/aafc74 |
[87] |
Li J, Li N, Ge C, Huang H, Sun Y, Gao P, He M, Wang C, Yang G and Jin K 2019 IScience 16 368
doi: 10.1016/j.isci.2019.05.043 |
[88] |
Li J, Ge C, Du J, Wang C, Yang G and Jin K 2020 Adv. Mater. 32 1905764
doi: 10.1002/adma.201905764 |
[89] |
Oh S, Hwang H and Yoo I K 2019 APL Mater. 7 091109
doi: 10.1063/1.5108562 |
[90] |
Kim M K and Lee J S 2019 Nano Lett. 19 2044
doi: 10.1021/acs.nanolett.9b00180 |
[91] | Nishitani Y, Kaneko Y, Ueda M, Fujii E and Tsujimura A 2013 Jpn. J. Appl. Phys. 52 04CE06 |
[92] |
Hoffman J, Pan X, Reiner J W, Walker F J, Han J P, Ahn C H and Ma T P 2010 Adv. Mater. 22 2957
doi: 10.1002/adma.200904327 |
[93] |
Naber R C G, Asadi K, Blom P W M, de Leeuw D M and de Boer B 2010 Adv. Mater. 22 933
doi: 10.1002/adma.200900759 |
[94] |
Miller S L and McWhorter P J 1992 J. Appl. Phys. 72 5999
doi: 10.1063/1.351910 |
[95] |
Tian B, Liu L, Yan M, Wang J, Zhao Q, Zhong N, Xiang P, Sun L, Peng H, Shen H, Lin T, Dkhil B, Meng X, Chu J, Tang X and Duan C 2019 Adv. Electron. Mater. 5 1800600
doi: 10.1002/aelm.201800600 |
[96] | Li E, Wu X, Lan S, Yang Q, Fang Y, Chen H and Guo T 2019 J. Mater. Chem. C 7 998 |
[97] |
Chen Y, Zhou Y, Zhuge F, Tian B, Yan M, Li Y, He Y and Miao X S 2019 npj 2D Mater. Appl. 3 31
doi: 10.1038/s41699-019-0114-6 |
[98] |
Xu T, Xiang L, Xu M, Xie W and Wang W 2017 Sci. Rep. 7 8890
doi: 10.1038/s41598-017-09533-2 |
[99] |
Oh S, Kim T, Kwak M, Song J, Woo J, Jeon S, Yoo I K and Hwang H 2017 IEEE Electron Device Lett. 38 732
doi: 10.1109/LED.2017.2698083 |
[100] |
Böscke T S, Müller J, Bräuhaus D, Schröder U and Böttger U 2011 Appl. Phys. Lett. 99 102903
doi: 10.1063/1.3634052 |
[101] |
Yin W J, Wei S H, Al-Jassim M M and Yan Y 2011 Appl. Phys. Lett. 99 142109
doi: 10.1063/1.3647756 |
[102] |
Starschich S, Griesche D, Schneller T, Waser R and Böttger U 2014 Appl. Phys. Lett. 104 202903
doi: 10.1063/1.4879283 |
[103] |
Mueller S, Mueller J, Singh A, Riedel S, Sundqvist J, Schroeder U and Mikolajick T 2012 Adv. Funct. Mater. 22 2412
doi: 10.1002/adfm.201103119 |
[104] |
Kim S J, Mohan J, Lee J, Lee J S, Lucero A T, Young C D, Colombo L, Summerfelt S R, San T and Kim J 2018 Appl. Phys. Lett. 112 172902
doi: 10.1063/1.5026715 |
[105] |
Kim S J, Narayan D, Lee J G, Mohan J, Lee J S, Lee J, Kim H S, Byun Y C, Lucero A T, Young C D, Summerfelt S R, San T, Colombo L and Kim J 2017 Appl. Phys. Lett. 111 242901
doi: 10.1063/1.4995619 |
[106] | Jerry M, Chen P, Zhang J, Sharma P, Ni K, Yu S and Datta S 2017 IEEE Int. Electron. Devices Meeting (IEDM), December 2-6, 2017, San Francisco, USA, p. 6.2.1 |
[107] |
Yu S 2018 Proc. IEEE 106 260
doi: 10.1109/JPROC.2018.2790840 |
[108] |
Wan C, Chen G, Fu Y, Wang M, Matsuhisa N, Pan S, Pan L, Yang H, Wan Q, Zhu L and Chen X 2018 Adv. Mater. 30 1801291
doi: 10.1002/adma.201801291 |
[109] | Lee Y, Oh J Y, Xu W, Kim O, Kim T R, Kang J, Kim Y, Son D, Tok J B H, Park M J, Bao Z and Lee T W 2018 Sci. Adv. 4 eaat7387 |
[110] |
Kim Y, Chortos A, Xu W, Liu Y, Oh J Y, Son D, Kang J, Foudeh A M, Zhu C, Lee Y, Niu S, Liu J, Pfattner R, Bao Z and Lee T W 2018 Science 360 998
doi: 10.1126/science.aao0098 |
[111] |
He Y, Nie S, Liu R, Jiang S, Shi Y and Wan Q 2019 Adv. Mater. 31 1900903
doi: 10.1002/adma.201900903 |
[112] |
John R A, Liu F, Chien N A, Kulkarni M R, Zhu C, Fu Q, Basu A, Liu Z and Mathews N 2018 Adv. Mater. 30 1800220
doi: 10.1002/adma.201800220 |
[113] |
Qin S, Wang F, Liu Y, Wan Q, Wang X, Xu Y, Shi Y, Wang X and Zhang R 2017 2D Mater. 4 035022
doi: 10.1088/2053-1583/aa805e |
[114] |
Zang Y, Zhang F, Huang D, Gao X, Di C A and Zhu D 2015 Nat. Commun. 6 6269
doi: 10.1038/ncomms7269 |
[115] |
Yu J J, Liang L Y, Hu L X, Duan H X, Wu W H, Zhang H L, Gao J H, Zhuge F, Chang T C and Cao H T 2019 Nano Energy 62 772
doi: 10.1016/j.nanoen.2019.06.007 |
[116] | Herman M A, Trimbuch T and Rosenmund C 2018 Front. Synaptic Neurosci. 10 |
[117] |
Nie S, He Y, Liu R, Shi Y and Wan Q 2019 IEEE Electron Device Lett. 40 459
doi: 10.1109/LED.2019.2897228 |
[118] |
Wan C J, Zhu L Q, Liu Y H, Feng P, Liu Z P, Cao H L, Xiao P, Shi Y and Wan Q 2016 Adv. Mater. 28 3557
doi: 10.1002/adma.201505898 |
[1] | Yong-Tao Yu(于永涛) and Xiao-Li Yang(杨晓丽). Inverse stochastic resonance in modular neural network with synaptic plasticity[J]. 中国物理B, 2023, 32(3): 30201-030201. |
[2] | Gang Dou(窦刚), Ming-Long Dou(窦明龙), Ren-Yuan Liu(刘任远), and Mei Guo(郭梅). Artificial synaptic behavior of the SBT-memristor[J]. 中国物理B, 2021, 30(7): 78401-078401. |
[3] | Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青). Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor[J]. 中国物理B, 2021, 30(5): 58102-058102. |
[4] | 汪翔, 葛琛, 李格, 郭尔佳, 何萌, 王灿, 杨国桢, 金奎娟. A synaptic transistor with NdNiO3[J]. 中国物理B, 2020, 29(9): 98101-098101. |
[5] | 郭延博, 竺立强. Recent progress in optoelectronic neuromorphic devices[J]. 中国物理B, 2020, 29(7): 78502-078502. |
[6] | 胡庆, 董博义, 王伦, 黄恩铭, 童浩, 何毓辉, 徐明, 缪向水. An artificial synapse by superlattice-like phase-change material for low-power brain-inspired computing[J]. 中国物理B, 2020, 29(7): 70701-070701. |
[7] | 王硕培, 何聪丽, 汤建, 杨蓉, 时东霞, 张广宇. Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor[J]. 中国物理B, 2019, 28(1): 17304-017304. |
|