Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

doi:10.1088/1674-1056/ab592f

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 18101-018101.doi: 10.1088/1674-1056/ab592f

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

Ming-Ming Guo(郭明明), Shang-Sheng Li(李尚升), Mei-Hua Hu(胡美华), Tai-Chao Su(宿太超), Jun-Zuo Wang(王君卓), Guang-Jin Gao(高广进), Yue You(尤悦), Yuan Nie(聂媛)

1 Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, China;
2 Jiaozuo Engineering Technology Research Center of Advanced Functional Materials Preparation under High Pressure, Jiaozuo 454003, China

收稿日期:2019-09-20 修回日期:2019-11-12 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: Shang-Sheng Li E-mail:lishsh@hpu.edu.cn,lss_2006@126.com
基金资助:
Project supported by the Natural Science Foundation of Henan Province of China (Grant No. 182300410279), the Key Science and Technology Research Project of Henan Province of China (Grant No. 182102210311), the Key Scientific Research Project in Colleges and Universities of Henan Province of China (Grant Nos. 18A430017 and 20B140009), the Fundamental Research Funds for the Universities of Henan Province of China (Grant No. NSFRF180408), and the Fund for the Innovative Research Team (in Science and Technology) in the University of Henan Province of China (Grant No. 19IRTSTHN027).

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

Ming-Ming Guo(郭明明)^1,2, Shang-Sheng Li(李尚升)^1,2, Mei-Hua Hu(胡美华)^1,2, Tai-Chao Su(宿太超)^1,2, Jun-Zuo Wang(王君卓)^1,2, Guang-Jin Gao(高广进)^1,2, Yue You(尤悦)^1,2, Yuan Nie(聂媛)^1,2

1 Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, China;
2 Jiaozuo Engineering Technology Research Center of Advanced Functional Materials Preparation under High Pressure, Jiaozuo 454003, China

Received:2019-09-20 Revised:2019-11-12 Online:2020-01-05 Published:2020-01-05
Contact: Shang-Sheng Li E-mail:lishsh@hpu.edu.cn,lss_2006@126.com
Supported by:
Project supported by the Natural Science Foundation of Henan Province of China (Grant No. 182300410279), the Key Science and Technology Research Project of Henan Province of China (Grant No. 182102210311), the Key Scientific Research Project in Colleges and Universities of Henan Province of China (Grant Nos. 18A430017 and 20B140009), the Fundamental Research Funds for the Universities of Henan Province of China (Grant No. NSFRF180408), and the Fund for the Innovative Research Team (in Science and Technology) in the University of Henan Province of China (Grant No. 19IRTSTHN027).

摘要/Abstract

摘要： High-quality type I!Ia large diamond crystals are synthesized with Ti/Cu as nitrogen getter doped in an FeNi-C system at temperature ranging from 1230 ℃ to 1380 ℃ and at pressure 5.3-5.9 GPa by temperature gradient method. Different ratios of Ti/Cu are added to the FeNi-C system to investigate the best ratio for high-quality type I!Ia diamond. Then, the different content of nitrogen getter Ti/Cu (Ti:Cu=4:3) is added to this synthesis system to explore the effect on diamond growth. The macro and micro morphologies of synthesized diamonds with Ti/Cu added, whose nitrogen concentration is determined by Fourier transform infrared (FTIR), are analyzed by optical microscopy (OM) and scanning electron microscopy (SEM), respectively. It is found that the inclusions in the obtained crystals are minimal when the Ti/Cu ratio is 4:3. Furthermore, the temperature interval for diamond growth becomes narrower when using Ti as the nitrogen getter. Moreover, the lower edge of the synthesis temperature of type IIa diamond is 25 ℃ higher than that of type Ib diamond. With the increase of the content of Ti/Cu (Ti:Cu=4:3), the color of the synthesized crystals changes from yellow and light yellow to colorless. When the Ti/Cu content is 1.7 wt%, the nitrogen concentration of the crystal is less than 1 ppm. The SEM results show that the synthesized crystals are mainly composed by (111) and (100) surfaces, including (311) surface, when the nitrogen getter is added into the synthesis system. At the same time, there are triangular pits and dendritic growth stripes on the crystal surface. This work will contribute to the further research and development of high-quality type I!Ia diamond.

关键词: high temperature and high pressure, temperature gradient method, type I!Ia diamond

Abstract: High-quality type I!Ia large diamond crystals are synthesized with Ti/Cu as nitrogen getter doped in an FeNi-C system at temperature ranging from 1230 ℃ to 1380 ℃ and at pressure 5.3-5.9 GPa by temperature gradient method. Different ratios of Ti/Cu are added to the FeNi-C system to investigate the best ratio for high-quality type I!Ia diamond. Then, the different content of nitrogen getter Ti/Cu (Ti:Cu=4:3) is added to this synthesis system to explore the effect on diamond growth. The macro and micro morphologies of synthesized diamonds with Ti/Cu added, whose nitrogen concentration is determined by Fourier transform infrared (FTIR), are analyzed by optical microscopy (OM) and scanning electron microscopy (SEM), respectively. It is found that the inclusions in the obtained crystals are minimal when the Ti/Cu ratio is 4:3. Furthermore, the temperature interval for diamond growth becomes narrower when using Ti as the nitrogen getter. Moreover, the lower edge of the synthesis temperature of type IIa diamond is 25 ℃ higher than that of type Ib diamond. With the increase of the content of Ti/Cu (Ti:Cu=4:3), the color of the synthesized crystals changes from yellow and light yellow to colorless. When the Ti/Cu content is 1.7 wt%, the nitrogen concentration of the crystal is less than 1 ppm. The SEM results show that the synthesized crystals are mainly composed by (111) and (100) surfaces, including (311) surface, when the nitrogen getter is added into the synthesis system. At the same time, there are triangular pits and dendritic growth stripes on the crystal surface. This work will contribute to the further research and development of high-quality type I!Ia diamond.

Key words: high temperature and high pressure, temperature gradient method, type I!Ia diamond

中图分类号: (Diamond)

81.05.ug

61.72.S- (Impurities in crystals) 61.05.C- (X-ray diffraction and scattering) 07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells)

郭明明, 李尚升, 胡美华, 宿太超, 王君卓, 高广进, 尤悦, 聂媛. Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system[J]. 中国物理B, 2020, 29(1): 18101-018101.

Ming-Ming Guo(郭明明), Shang-Sheng Li(李尚升), Mei-Hua Hu(胡美华), Tai-Chao Su(宿太超), Jun-Zuo Wang(王君卓), Guang-Jin Gao(高广进), Yue You(尤悦), Yuan Nie(聂媛). Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system [J]. Chin. Phys. B, 2020, 29(1): 18101-018101.

参考文献 25

[1]	Wentorf R H 1971 J. Phys. Chem. 75 1833 doi: 10.1021/j100681a013
[2]	Strong, H M, Chrenko and R M 1971 J. Phys. Chem. 75 1838 doi: 10.1021/j100681a014
[3]	Yang Z J, Li H Z, Peng M S, Chen J and Lin F 2008 Chin. Sci. Bull. 53 137 doi: 10.1007/s11434-008-0020-3
[4]	Isoya J, Kanda H, Akaishi M, Moritad Y and Ohshimad T 1997 Diamond Relat. Mater. 6 356 doi: 10.1016/S0925-9635(96)00602-4
[5]	Hu M H, Bi N, Li S S, Su T C, Hu Q, Jia X P and Ma H A 2015 Chin. Phys. B 24 038101 doi: 10.1088/1674-1056/24/3/038101
[6]	Wang J Z, Li S S, Hu M H, Su T C, Gao G J, Guo M M, You Y and Nie Y 2020 Int. J. Refract. Met. Hard Mater. 87 105150 doi: 10.1016/j.ijrmhm.2019.105150
[7]	Sumiya H, Toda N and Satoh S 2002 J. Cryst. Growth 237-239 1281 doi: 10.1016/S0022-0248(01)02145-5
[8]	Sumiya H, Harano K and Tamasaku K 2015 Diamond Relat. Mater. 58 221 doi: 10.1016/j.diamond.2015.08.006
[9]	Liang Z Z, Kanda H, Jia X P, Ma H A, Zhu P W, Guan Q F and Zang C Y 2006 Carbon 44 913 doi: 10.1016/j.carbon.2005.10.018
[10]	Wang J K, Li S S, Cui J L, Feng L, Yu H, Su T C, Hu M H, Yu K P, Han F, Ma H A and Jia X P 2019 Int. J. Refract. Met. Hard Mater. 81 100 doi: 10.1016/j.ijrmhm.2019.02.011
[11]	Wang J K, Li S S, Yu K P, Feng L, Yu H, Su T C, Hu M H, Kunpeng Yu, Han F, Ma H A and Jia X P 2019 Chin. Phys. Lett. 36 046101 doi: 10.1088/0256-307X/36/4/046101
[12]	Yu K P, Li S S, Yang Q, Leng K Q, Hu M H, Su T C, Guo M M, Gao G J, Wang J Z and Yue Y 2019 CrystEngComm. 21 6810 doi: 10.1039/C9CE01257E
[13]	Gong C S, Li S S, Zhang H R, Su T C, Hu M H, Ma H A, Jia X P and Li Y 2017 Int. J. Refract. Met. Hard Mater. 66 116 doi: 10.1016/j.ijrmhm.2017.03.003
[14]	Fang C, Jia X P, Sun S S, Yan B M, Chen N, Li Y and Ma H A 2016 High Press. Res. 36 42 doi: 10.1080/08957959.2015.1129405
[15]	Palyanov Y N, Borzdov Y M, Khokhryakov A F, Kupriyanov L N and Sokol A G 2010 Cryst. Growth & Des. 10 3169 doi: . Growth
[16]	Akaishi M, Kanda H and Yamaoka S 1993 Science 259 1592 doi: 10.1126/science.259.5101.1592
[17]	Kanda H, Akaishi M and Yamaoka S 1994 Appl. Phys. Lett. 65 784 doi: 10.1063/1.112230
[18]	Michau D, Knada H and Yamaoka S 1999 Diamond Relat. Mater. 8 1125 doi: 10.1016/S0925-9635(99)00100-4
[19]	Shulzhenko A A, Ignatyeva I Y, Osipov A S and Smirnova. T L 2000 Diamond Relat. Mater. 9 129 doi: 10.1016/S0925-9635(99)00231-9
[20]	Wang X C, Ma H A, Zang C Y, Tian Y, Li S S and Jia X P 2005 Chin. Phys. Lett. 22 1800 doi: 10.1088/0256-307X/22/7/066
[21]	Wang J Z, Li S S, Su T C, Hu M H, Hu Q, Wu Y M, Wang J K, Han F, Yu K P, Gao G J, Guo M M, Jia X P, Ma H A and Xiao H Y 2018 Acta Phys. Sin. 67 168101 (in Chinese)
[22]	Li S S, Zhang H, Su T C, Hu Q, Hu M H, Gong C S, Ma H A, Jia X P and Li Y 2017 Chin. Phys. B 26 068102 doi: 10.1088/1674-1056/26/6/068102
[23]	Liang Z Z, Jia X P, Zang C Y, Zhu P W, Ma H A and Ren G Z 2005 Diamond Relat. Mater. 14 243 doi: 10.1016/j.diamond.2004.12.024
[24]	Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M and Ma H A 2012 Sci. Chin.: Phys. Mech. Astron. 55 781 doi: 10.1007/s11433-012-4716-7
[25]	Li S S, Li X L, Ma H A, Su T C, Xiao H Y, Huang G F, Li Y and Jia X P 2011 Chin. Phys. Lett. 28 068101 doi: 10.1088/0256-307X/28/6/068101

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

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