[1] |
Green M A, Hishikawa Y, Dunlop E D, Levi D H, Hohl-Ebinger J and Ho-Baillie A W Y 2018 Prog. Photovolt. Res. Appl. 26 3
doi: 10.1002/pip.2978
|
[2] |
Duggal A R, Shiang J J, Huber W H and Halverson A F (US Patent) US20140373908A1 [2014-12-25]
|
[3] |
Geisthardt R M, Topic M and Sites J R 2015 IEEE J. Photovolt. 5 1217
doi: 10.1109/JPHOTOV.2015.2434594
|
[4] |
Burst J M, et al. 2016 Nat. Energy 1 16015
doi: 10.1038/nenergy.2016.15
|
[5] |
Yang J H, Yin W J, Park J S, Burst J, Metzger W K, Gessert T, Barnes T and Wei S H 2015 J. Appl. Phys. 118 025102
doi: 10.1063/1.4926748
|
[6] |
Green M A, Keith E, Yoshihiro H, Wilhelm W and Dunlop E D 2012 Prog. Photovolt. Res. Appl. 20 606
doi: 10.1002/pip.2267
|
[7] |
Green M A, Keith E, Yoshihiro H, Wilhelm W and Dunlop E D 2015 Prog. Photovolt. Res. Appl. 23 805
doi: 10.1002/pip.2637
|
[8] |
Wei S H and Zunger A 1991 Phys. Rev. B 43 1662
doi: 10.1103/PhysRevB.43.1662
|
[9] |
Wang Y, Xu J, Ren P, Zhuang X, Zhou H, Zhang Q, Zhu X and Pan A 2013 Mater. Lett. 105 90
doi: 10.1016/j.matlet.2013.04.054
|
[10] |
Madelung O 1982 Semiconductors: Basic Data, 2nd edn. (Berlin: Spinger)
|
[11] |
Wei S H, Zhang S B and Zunger A 2000 J. Appl. Phys. 87 1304
doi: 10.1063/1.372014
|
[12] |
Yang X, et al. 2016 Mater. Sci. Semicond. Process. 48 27
doi: 10.1016/j.mssp.2016.03.009
|
[13] |
McCandless B E, Hanket G M, Jensen D G and Birkmire R W 2002 J. Vac. Sci. Technol. A 20 1462
doi: 10.1116/1.1487872
|
[14] |
Paudel N R and Yan Y 2014 Appl. Phys. Lett. 105 183510
doi: 10.1063/1.4901532
|
[15] |
Paudel N R, Poplawsky J D, Moore K L and Yan Y 2015 IEEE J. Photovolt. 5 1492
doi: 10.1109/JPHOTOV.2015.2458040
|
[16] |
Poplawsky J D, Guo W, Paudel N, Ng A, More K, Leonard D and Yan Y 2016 Nat. Commun. 7 12537
doi: 10.1038/ncomms12537
|
[17] |
Islam R, Banerjee H D and Rao D R 1995 Thin Solid Films 266 215
doi: 10.1016/0040-6090(96)80027-7
|
[18] |
Tit N, Obaidat I M and Alawadhi H 2009 J. Phys.: Condens. Matter 21 075802
doi: 10.1088/0953-8984/21/7/075802
|
[19] |
Wen S, et al. 2017 Nanomater. (Basel) 7 380
|
[20] |
Lingg M, Spescha A, Haass S G, Carron R, Buecheler S and Tiwari A N 2018 Sci. Technol. Adv. Mater. 19 683
doi: 10.1080/14686996.2018.1497403
|
[21] |
MacDonald B I, Martucci A, Rubanov S, Watkins S E, Mulvaney P and Jasieniak J J 2012 ACS Nano 6 5995
doi: 10.1021/nn3009189
|
[22] |
Perrenoud J, Kranz L, Gretener C, Pianezzi F, Nishiwaki S, Buecheler S and Tiwari A N 2013 J. Appl. Phys. 114 174505
doi: 10.1063/1.4828484
|
[23] |
Kranz L, et al. 2013 Nat. Commun. 4 2306
doi: 10.1038/ncomms3306
|
[24] |
Bätzner D L, Romeo A, Zogg H, Wendt R and Tiwari A N 2001 Thin Solid Films 387 151
doi: 10.1016/S0040-6090(01)00792-1
|
[25] |
Kresse G and Furthmüller J 1996 Comput. Mater. Sci. 6 15
doi: 10.1016/0927-0256(96)00008-0
|
[26] |
Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
doi: 10.1103/PhysRevB.54.11169
|
[27] |
Perdew J P, Ruzsinszky A, Csonka G I, Vydrov O A, Scuseria G E, Constantin L A, Zhou X and Burke K 2008 Phys. Rev. Lett. 100 136406
doi: 10.1103/PhysRevLett.100.136406
|
[28] |
Krukau A V, Vydrov O A, Izmaylov A F and Scuseria G E 2006 J. Chem. Phys. 125 224106
doi: 10.1063/1.2404663
|
[29] |
Wei S H, Ferreira L G, Bernard J E and Zunger A 1990 Phys. Rev. B 42 9622
doi: 10.1103/PhysRevB.42.9622
|
[30] |
Ma J, Wei S H, Gessert T A and Chin K K 2011 Phys. Rev. B 83 245207
doi: 10.1103/PhysRevB.83.245207
|
[31] |
Yang J H, Chen S, Xiang H, Gong X G and Wei S H 2011 Phys. Rev. B 83 235208
doi: 10.1103/PhysRevB.83.235208
|
[32] |
Yang J H, Yin W J, Park J S, Ma J and Wei S H 2016 Semicond. Sci. Technol. 31 083002
doi: 10.1088/0268-1242/31/8/083002
|
[33] |
Vegard L 1921 Z. Phys. 5 17
doi: 10.1007/BF01349680
|
[34] |
Deng H X, Luo J W, Wei S H 2018 Chin. Phys. B 27 117104
doi: 10.1088/1674-1056/27/11/117104
|
[35] |
Ma J and Wei S H 2013 Phys. Rev. B 87 241201
doi: 10.1103/PhysRevB.87.241201
|
[36] |
Zhu J, Liu F, Stringfellow G B and Wei S H 2010 Phys. Rev. Lett. 105 195503
doi: 10.1103/PhysRevLett.105.195503
|