High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

doi:10.1088/1674-1056/28/6/064208

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 64208-064208.doi: 10.1088/1674-1056/28/6/064208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

Xiao-Qian Du(杜小倩), Chong Li(李冲), Ben Li(黎奔), Nan Wang(王楠), Yue Zhao(赵越), Fan Yang(杨帆), Kai Yu(余凯), Lin Zhou(周琳), Xiu-Li Li(李秀丽), Bu-Wen Cheng(成步文), Chun-Lai Xue(薛春来)

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

收稿日期:2019-01-24 修回日期:2019-03-14 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Chun-Lai Xue E-mail:clxue@semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402502 and 2017YFF0104803), the National Natural Science Foundation of China (Grant Nos. 61674140 and 61505003), the Beijing Natural Science Foundation, China (Grant No. 4162063), Beijing Education Commission Project (Grant No. SQKM201610005008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC022).

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

Xiao-Qian Du(杜小倩)^1,2, Chong Li(李冲)³, Ben Li(黎奔)³, Nan Wang(王楠)^1,2, Yue Zhao(赵越)^1,2, Fan Yang(杨帆)^1,2, Kai Yu(余凯)^1,2, Lin Zhou(周琳)^1,2, Xiu-Li Li(李秀丽)^1,2,1,2, Bu-Wen Cheng(成步文)^1,2, Chun-Lai Xue(薛春来)^1,2

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

Received:2019-01-24 Revised:2019-03-14 Online:2019-06-05 Published:2019-06-05
Contact: Chun-Lai Xue E-mail:clxue@semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402502 and 2017YFF0104803), the National Natural Science Foundation of China (Grant Nos. 61674140 and 61505003), the Beijing Natural Science Foundation, China (Grant No. 4162063), Beijing Education Commission Project (Grant No. SQKM201610005008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC022).

摘要/Abstract

摘要：

Step-coupler waveguide-integrated Ge/Si avalanche photodetector (APD) is based on the vertical multimode interference (MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical modes close to the Ge layer. However, there are two ineluctable contact angels between selectively epitaxial growth Ge and Si layers and selectively epitaxial growth Si and Si substrate, which has an effect on the coupling efficiency and the absorption of the photodetector. Therefore, step-coupled Ge/Si avalanche photodetectors with different step lengths are designed and fabricated. It is found that responsivity of APDs with step-coupler-length of 3.0 μm is 0.51 A/W at -6 V, 21% higher than that of 1.5 μm, which matches well with simulation absorption. The multiplication gain factor is as high as 50, and the maximum gain-bandwidth product reaches up to 376 GHz.

关键词: waveguides, photodetectors, waveguide devices

Abstract:

Key words: waveguides, photodetectors, waveguide devices

中图分类号: (Waveguides, couplers, and arrays)

42.82.Et

42.79.Gn (Optical waveguides and couplers) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

杜小倩, 李冲, 黎奔, 王楠, 赵越, 杨帆, 余凯, 周琳, 李秀丽, 成步文, 薛春来. High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers[J]. 中国物理B, 2019, 28(6): 64208-064208.

Xiao-Qian Du(杜小倩), Chong Li(李冲), Ben Li(黎奔), Nan Wang(王楠), Yue Zhao(赵越), Fan Yang(杨帆), Kai Yu(余凯), Lin Zhou(周琳), Xiu-Li Li(李秀丽), Bu-Wen Cheng(成步文), Chun-Lai Xue(薛春来). High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers[J]. Chin. Phys. B, 2019, 28(6): 64208-064208.

参考文献 27

[1]	Campbell J C 2016 J. Lightwave Technol. 34 278 doi: 10.1109/JLT.2015.2453092
[2]	Humphreys D A and King R J 1985 Electron. Lett. 21 1187 doi: 10.1049/el:19850839
[3]	Amiento C A and Groves S H 1983 Appl. Phys. Lett. 43 333 doi: 10.1063/1.94346
[4]	Li Y, Shi Z F, Li X J and Shan C X 2019 Chin. Phys. B 28 017803 doi: 10.1088/1674-1056/28/1/017803
[5]	Li X, Sun J D, Zhang Z P, Popov V V and Qin H 2018 Chin. Phys. B 27 068506 doi: 10.1088/1674-1056/27/6/068506
[6]	Shi J, Ma R Q, Duan Z L, Liang M, Chai B Y and Dong J 2017 Chin. Phys. B 26 124214 doi: 10.1088/1674-1056/26/12/124214
[7]	Wang X X, Chen.L, Chen W, Cui.H.L, Hu Y, Cai P F, Yang R, Hong C Y, Pan D, Ang K W, Yu M B, Fang Q and Lo G Q 2009 Optical Fiber Communication Conference, 2009, March 22-26, 2009, San Diego, USA, p. OMR3
[8]	Wu W Z, Cheng B W, Zheng J, Liu Z, Li C B, Zuo Y H and Xue C L 2017 J. Semicond. 38 114003 doi: 10.1088/1674-4926/38/11/114003
[9]	Li B, Yang X H, Yin W H, Lv Q Q, Cui R and Han Q 2014 J. Semicond. 35 074009 doi: 10.1088/1674-4926/35/7/074009
[10]	Ahn D, Hong Y C, Liu J F, Giziewicz W, Beals M, Kimerling L C, Michel J, Chen J and Kartner F X 2007 Opt. Express 15 3916 doi: 10.1364/OE.15.003916
[11]	Vivien L, Osmond J, Fedeli J M, Marris-Morini D, Crozat P, Damlencourt J F, Cassan E, Lecunff Y and Laval S 2009 Opt. Express 17 6252 doi: 10.1364/OE.17.006252
[12]	Liao B X, Guo X D, Hu H, Liu N, Chen K, Yang X X and Dai Q 2018 Chin. Phys. B 27 094101 doi: 10.1088/1674-1056/27/9/094101
[13]	Kang Y M, Liu H D, Morse M, Paniccia M J, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y H, Chen H W, Zaoui W S, Bowers J E, Beling A, Mcintosh D C, Zheng X G and Campbell J C 2009 Nat. Photon. 3 59 doi: 10.1038/nphoton.2008.247
[14]	Rouvié A, Carpentier D, Lagay N, Décobert J, Pommereau F and Achouche M 2008 IEEE Photon. Tech. Lett. 20 455 doi: 10.1109/LPT.2008.918229
[15]	Yin T, Cohen R, Morse M M, Sarid G, Chetrit Y, Rubin D and Paniccia M J 2007 Opt. Express 15 13965 doi: 10.1364/OE.15.013965
[16]	Michel J, Liu J F and Kimerling L C 2010 Nat. Photon. 4 527 doi: 10.1038/nphoton.2010.157
[17]	Duan N, Liow T Y, Lim A E, Ding L and Lo G Q 2013 Optical Fiber Communication Conference, 2013, March 17-21, 2013, Anaheim, USA, p. OM3K.3
[18]	Liow T Y, Duan N, Lim A E, Tu X G, Yu M B and Lo G Q 2014 Optical Fiber Communication Conference, 2014, March 9-13, 2014, San Francisco, USA, p. M2G.6
[19]	Chen H, Verheyen P, Heyn P D, Lepage G, Coster J D, Balakrishnan S, Absil P, Yao W, Shen L, Roelkens G and Campenhout J V 2016 Opt. Express 24 4622 doi: 10.1364/OE.24.004622
[20]	Zhu S Y, Ang K W, C Rustagi S, Wang J, Xiong Y Z, Lo G Q and Kwong D L 2009 IEEE Electron Dev. Lett. 30 934 doi: 10.1109/LED.2009.2025782
[21]	Nicholas J D M, Michael G, Christopher T D, Andrew L S, Andrew T P, Anthony L L, Douglas C T and Paul S D 2017 Opt. Express 25 16130 doi: 10.1364/OE.25.016130
[22]	Nicholas J D M, Christopher T D, Reinhard W B, Andrew L S, Andrew T P, Anthony L L, Douglas C T and Paul S D 2016 Opt. Express 24 019072 doi: 10.1364/OE.24.019072
[23]	Wang X and Liu J 2011 IEEE Photon. Technol. Lett. 23 146 doi: 10.1109/LPT.2010.2094605
[24]	Halbwax M, Nguyen L H, Fossard F, Roux X L, Mathet V, Yam V, Cao D T and Bouchier D 2006 Mater. Sci. Semicond. Process. 9 460 doi: 10.1016/j.mssp.2006.08.040
[25]	Hartmann J M, Abbadie A, Papon A M, Holliger P, Roll, G, Billon T and Fédéli J M 2004 J. Appl. Phys. 95 5905 doi: 10.1063/1.1699524
[26]	Cong H, Xue C L, Liu Z, Li C B, Cheng B W and Wang Q M 2016 Chin. Phys. B 25 058503 doi: 10.1088/1674-1056/25/5/058503
[27]	Dash W C and Newman R 1955 Phys. Rev. 99 1151 doi: 10.1103/PhysRev.99.1151

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

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