Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics

doi:10.1088/1674-1056/ab50fe

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 128101-128101.doi: 10.1088/1674-1056/ab50fe

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics

Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平)

1 Ningbo Information Technology Service Center, Ningbo 315400, China;
2 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2019-06-24 修回日期:2019-09-27 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Jing-Ping Xu E-mail:jpxu@hust.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61774064).

Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics

Jian-Ying Chen(陈建颖)¹, Xin-Yuan Zhao(赵心愿)², Lu Liu(刘璐)², Jing-Ping Xu(徐静平)²

1 Ningbo Information Technology Service Center, Ningbo 315400, China;
2 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2019-06-24 Revised:2019-09-27 Online:2019-12-05 Published:2019-12-05
Contact: Jing-Ping Xu E-mail:jpxu@hust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61774064).

摘要/Abstract

摘要： NH₃-plasma treatment is used to improve the quality of the gate dielectric and interface. Al₂O₃ is adopted as a buffer layer between HfO₂ and MoS₂ to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C-V and I-V characteristics are compared. It is found that the Al₂O₃/HfO₂ back-gate transistor with NH₃-plasma treatment shows the best electrical performance:high on-off current ratio of 1.53×10⁷, higher field-effect mobility of 26.51 cm²/V…, and lower subthreshold swing of 145 mV/dec. These are attributed to the improvements of the gate dielectric and interface qualities by the NH₃-plasma treatment and the addition of Al₂O₃ as a buffer layer.

关键词: MoS₂ transistor, high-k dielectric, NH₃-plasma treatment, oxygen vacancy, mobility

Abstract: NH₃-plasma treatment is used to improve the quality of the gate dielectric and interface. Al₂O₃ is adopted as a buffer layer between HfO₂ and MoS₂ to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C-V and I-V characteristics are compared. It is found that the Al₂O₃/HfO₂ back-gate transistor with NH₃-plasma treatment shows the best electrical performance:high on-off current ratio of 1.53×10⁷, higher field-effect mobility of 26.51 cm²/V…, and lower subthreshold swing of 145 mV/dec. These are attributed to the improvements of the gate dielectric and interface qualities by the NH₃-plasma treatment and the addition of Al₂O₃ as a buffer layer.

Key words: MoS₂ transistor, high-k dielectric, NH₃-plasma treatment, oxygen vacancy, mobility

中图分类号: (Nanoscale materials and structures: fabrication and characterization)

81.07.-b

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology) 81.65.-b (Surface treatments)

陈建颖, 赵心愿, 刘璐, 徐静平. Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics[J]. 中国物理B, 2019, 28(12): 128101-128101.

Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平). Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics[J]. Chin. Phys. B, 2019, 28(12): 128101-128101.

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Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics

Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics

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