Two-dimensional XSe2 (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

doi:10.1088/1674-1056/ab3e45

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 107504-107504.doi: 10.1088/1674-1056/ab3e45

所属专题： SPECIAL TOPIC — A celebration of the 100th birthday of Kun Huang

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

Longfei Pan(潘龙飞), Hongyu Wen(文宏玉), Le Huang(黄乐), Long Chen(陈龙), Hui-Xiong Deng(邓惠雄), Jian-Bai Xia(夏建白), Zhongming Wei(魏钟鸣)

1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;
2 School of Materials and Energy, Guangdong University of Technology, Guangdong 510006, China;
3 Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Tianjin University, Tianjin 300072, China;
4 Beijing Academy of Quantum Information Sciences, Beijing 100193, China

收稿日期:2019-08-13 修回日期:2019-08-25 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Hongyu Wen, Zhongming Wei E-mail:wenhongyu@semi.ac.cn;zmwei@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61571415 and 61622406), the National Key Research and Development Program of China (Grant No. 2017YFA0207500), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Academy of Quantum Information Sciences, China (Grant No. Y18G04).

Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

Longfei Pan(潘龙飞)¹, Hongyu Wen(文宏玉)¹, Le Huang(黄乐)², Long Chen(陈龙)³, Hui-Xiong Deng(邓惠雄)¹, Jian-Bai Xia(夏建白)^1,4, Zhongming Wei(魏钟鸣)^1,4

1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;
2 School of Materials and Energy, Guangdong University of Technology, Guangdong 510006, China;
3 Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Tianjin University, Tianjin 300072, China;
4 Beijing Academy of Quantum Information Sciences, Beijing 100193, China

Received:2019-08-13 Revised:2019-08-25 Online:2019-10-05 Published:2019-10-05
Contact: Hongyu Wen, Zhongming Wei E-mail:wenhongyu@semi.ac.cn;zmwei@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61571415 and 61622406), the National Key Research and Development Program of China (Grant No. 2017YFA0207500), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Academy of Quantum Information Sciences, China (Grant No. Y18G04).

摘要/Abstract

摘要： Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe₂ (X=Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe₂. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe₂ (X=Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.

关键词: two-dimensional material, magnetic tunneling junctions, tunneling magnetoresistance, ferromagnetism

Abstract: Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe₂ (X=Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe₂. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe₂ (X=Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.

Key words: two-dimensional material, magnetic tunneling junctions, tunneling magnetoresistance, ferromagnetism

中图分类号: (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

75.70.Cn

75.70.Ak (Magnetic properties of monolayers and thin films) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

潘龙飞, 文宏玉, 黄乐, 陈龙, 邓惠雄, 夏建白, 魏钟鸣. Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature[J]. 中国物理B, 2019, 28(10): 107504-107504.

Longfei Pan(潘龙飞), Hongyu Wen(文宏玉), Le Huang(黄乐), Long Chen(陈龙), Hui-Xiong Deng(邓惠雄), Jian-Bai Xia(夏建白), Zhongming Wei(魏钟鸣). Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature[J]. Chin. Phys. B, 2019, 28(10): 107504-107504.

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Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

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