Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors

doi:10.1088/1674-1056/ab3e68

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 107303-107303.doi: 10.1088/1674-1056/ab3e68

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors

Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华)

1 Engineering Research Center for Semiconductor Integrated Technology & Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2019-06-12 修回日期:2019-08-14 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Wei-Hua Han E-mail:weihua@semi.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant No. 61327813).

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors

Yang-Yan Guo(郭仰岩)^1,2, Wei-Hua Han(韩伟华)^1,2, Xiao-Song Zhao(赵晓松)^1,2, Ya-Mei Dou(窦亚梅)^1,2, Xiao-Di Zhang(张晓迪)^1,2, Xin-Yu Wu(吴歆宇)^1,2, Fu-Hua Yang(杨富华)^1,2,3

1 Engineering Research Center for Semiconductor Integrated Technology & Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2019-06-12 Revised:2019-08-14 Online:2019-10-05 Published:2019-10-05
Contact: Wei-Hua Han E-mail:weihua@semi.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant No. 61327813).

摘要/Abstract

摘要：

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance g_m peak in V_g1 and valley in V_g2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V_g1 and V_g2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

关键词: junctionless nanowire transistors, temperature-dependent conductance, variable range hopping, localization length

Abstract:

Key words: junctionless nanowire transistors, temperature-dependent conductance, variable range hopping, localization length

中图分类号: (Quantum dots)

73.63.Kv

72.20.Ee (Mobility edges; hopping transport) 71.23.An (Theories and models; localized states) 85.30.Tv (Field effect devices)

郭仰岩, 韩伟华, 赵晓松, 窦亚梅, 张晓迪, 吴歆宇, 杨富华. Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors[J]. 中国物理B, 2019, 28(10): 107303-107303.

Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华). Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors[J]. Chin. Phys. B, 2019, 28(10): 107303-107303.

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Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors

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