Unconventional phase transition of phase-change-memory materials for optical data storage

doi:10.1088/1674-1056/ab3cc3

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 104202-104202.doi: 10.1088/1674-1056/ab3cc3

所属专题： TOPICAL REVIEW — A celebration of the 100th birthday of Kun Huang

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Unconventional phase transition of phase-change-memory materials for optical data storage

Nian-Ke Chen(陈念科), Xian-Bin Li(李贤斌)

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

收稿日期:2019-07-17 修回日期:2019-08-15 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Xian-Bin Li E-mail:lixianbin@jlu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61922035 and 11904118).

Unconventional phase transition of phase-change-memory materials for optical data storage

Nian-Ke Chen(陈念科), Xian-Bin Li(李贤斌)

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Received:2019-07-17 Revised:2019-08-15 Online:2019-10-05 Published:2019-10-05
Contact: Xian-Bin Li E-mail:lixianbin@jlu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61922035 and 11904118).

摘要/Abstract

摘要： Recent years, optically controlled phase-change memory draws intensive attention owing to some advanced applications including integrated all-optical nonvolatile memory, in-memory computing, and neuromorphic computing. The light-induced phase transition is the key for this technology. Traditional understanding on the role of light is the heating effect. Generally, the RESET operation of phase-change memory is believed to be a melt-quenching-amorphization process. However, some recent experimental and theoretical investigations have revealed that ultrafast laser can manipulate the structures of phase-change materials by non-thermal effects and induces unconventional phase transitions including solid-to-solid amorphization and order-to-order phase transitions. Compared with the conventional thermal amorphization, these transitions have potential superiors such as faster speed, better endurance, and low power consumption. This article summarizes some recent progress of experimental observations and theoretical analyses on these unconventional phase transitions. The discussions mainly focus on the physical mechanism at atomic scale to provide guidance to control the phase transitions for optical storage. Outlook on some possible applications of the non-thermal phase transition is also presented to develop new types of devices.

关键词: light-matter interaction, phase-change memory, non-thermal phase transition, optical data storage

Abstract: Recent years, optically controlled phase-change memory draws intensive attention owing to some advanced applications including integrated all-optical nonvolatile memory, in-memory computing, and neuromorphic computing. The light-induced phase transition is the key for this technology. Traditional understanding on the role of light is the heating effect. Generally, the RESET operation of phase-change memory is believed to be a melt-quenching-amorphization process. However, some recent experimental and theoretical investigations have revealed that ultrafast laser can manipulate the structures of phase-change materials by non-thermal effects and induces unconventional phase transitions including solid-to-solid amorphization and order-to-order phase transitions. Compared with the conventional thermal amorphization, these transitions have potential superiors such as faster speed, better endurance, and low power consumption. This article summarizes some recent progress of experimental observations and theoretical analyses on these unconventional phase transitions. The discussions mainly focus on the physical mechanism at atomic scale to provide guidance to control the phase transitions for optical storage. Outlook on some possible applications of the non-thermal phase transition is also presented to develop new types of devices.

Key words: light-matter interaction, phase-change memory, non-thermal phase transition, optical data storage

中图分类号: (Optical storage systems, optical disks)

42.79.Vb

64.60.-i (General studies of phase transitions) 81.30.Hd (Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder) 63.20.dk (First-principles theory)

陈念科, 李贤斌. Unconventional phase transition of phase-change-memory materials for optical data storage[J]. 中国物理B, 2019, 28(10): 104202-104202.

Nian-Ke Chen(陈念科), Xian-Bin Li(李贤斌). Unconventional phase transition of phase-change-memory materials for optical data storage[J]. Chin. Phys. B, 2019, 28(10): 104202-104202.

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Unconventional phase transition of phase-change-memory materials for optical data storage

Unconventional phase transition of phase-change-memory materials for optical data storage

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