Fabrication of seeded substrates for layer transferrable silicon films

doi:10.1088/1674-1056/27/8/086802

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 86802-086802.doi: 10.1088/1674-1056/27/8/086802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Fabrication of seeded substrates for layer transferrable silicon films

Ji-Zhou Li(李纪周), Wei Zhang(张伟), Jing-Yuan Yan(鄢靖源), Cong Wang(王聪), Hong-Fei Chen(陈宏飞), Xiao-Yuan Chen(陈小源), Dong-Fang Liu(刘东方)

1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
2 Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China

收稿日期:2018-03-15 修回日期:2018-04-12 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Hong-Fei Chen, Dong-Fang Liu E-mail:hfchen@i.shu.edu.cn;liudf@sari.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11374313) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11504392).{These authors contributed equally.} aisebox{\ht\strutbox}{\hypertarget{ccauthor}} ^\ddag

Fabrication of seeded substrates for layer transferrable silicon films

Ji-Zhou Li(李纪周)^1,2, Wei Zhang(张伟)², Jing-Yuan Yan(鄢靖源)^1,2, Cong Wang(王聪)², Hong-Fei Chen(陈宏飞)¹, Xiao-Yuan Chen(陈小源)², Dong-Fang Liu(刘东方)²

1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
2 Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China

Received:2018-03-15 Revised:2018-04-12 Online:2018-08-05 Published:2018-08-05
Contact: Hong-Fei Chen, Dong-Fang Liu E-mail:hfchen@i.shu.edu.cn;liudf@sari.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11374313) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11504392).{These authors contributed equally.} aisebox{\ht\strutbox}{\hypertarget{ccauthor}} ^\ddag

摘要/Abstract

摘要： The layer transfer process is one of the most promising methods for low-cost and highly-efficient solar cells, in which transferrable mono-crystalline silicon thin wafers or films can be produced directly from gaseous feed-stocks. In this work, we show an approach to preparing seeded substrates for layer-transferrable silicon films. The commercial silicon wafers are used as mother substrates, on which periodically patterned silicon rod arrays are fabricated, and all of the surfaces of the wafers and rods are sheathed by thermal silicon oxide. Thermal evaporated aluminum film is used to fill the gaps between the rods and as the stiff mask, while polymethyl methacrylate (PMMA) and photoresist are used as the soft mask to seal the gap between the filled aluminum and the rods. Under the joint resist of the stiff and soft masks, the oxide on the rod head is selectively removed by wet etching and the seed site is formed on the rod head. The seeded substrate is obtained after the removal of the masks. This joint mask technique will promote the endeavor of the exploration of mechanically stable, unlimitedly reusable substrates for the kerfless technology.

关键词: seeded substrate, layer transfer, joint mask, filler, silicon film

Abstract: The layer transfer process is one of the most promising methods for low-cost and highly-efficient solar cells, in which transferrable mono-crystalline silicon thin wafers or films can be produced directly from gaseous feed-stocks. In this work, we show an approach to preparing seeded substrates for layer-transferrable silicon films. The commercial silicon wafers are used as mother substrates, on which periodically patterned silicon rod arrays are fabricated, and all of the surfaces of the wafers and rods are sheathed by thermal silicon oxide. Thermal evaporated aluminum film is used to fill the gaps between the rods and as the stiff mask, while polymethyl methacrylate (PMMA) and photoresist are used as the soft mask to seal the gap between the filled aluminum and the rods. Under the joint resist of the stiff and soft masks, the oxide on the rod head is selectively removed by wet etching and the seed site is formed on the rod head. The seeded substrate is obtained after the removal of the masks. This joint mask technique will promote the endeavor of the exploration of mechanically stable, unlimitedly reusable substrates for the kerfless technology.

Key words: seeded substrate, layer transfer, joint mask, filler, silicon film

中图分类号: (Semiconductors)

68.55.ag

81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.16.Rf (Micro- and nanoscale pattern formation) 81.16.-c (Methods of micro- and nanofabrication and processing)

李纪周, 张伟, 鄢靖源, 王聪, 陈宏飞, 陈小源, 刘东方. Fabrication of seeded substrates for layer transferrable silicon films[J]. 中国物理B, 2018, 27(8): 86802-086802.

Ji-Zhou Li(李纪周), Wei Zhang(张伟), Jing-Yuan Yan(鄢靖源), Cong Wang(王聪), Hong-Fei Chen(陈宏飞), Xiao-Yuan Chen(陈小源), Dong-Fang Liu(刘东方). Fabrication of seeded substrates for layer transferrable silicon films[J]. Chin. Phys. B, 2018, 27(8): 86802-086802.

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Fabrication of seeded substrates for layer transferrable silicon films

Fabrication of seeded substrates for layer transferrable silicon films

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