Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

doi:10.1088/1674-1056/22/1/016803

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 16803-016803.doi: 10.1088/1674-1056/22/1/016803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

张磊^a, 沈鸿烈^{a b}, 岳之浩^a, 江丰^a, 吴天如^a, 潘园园^a

a College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
b Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

收稿日期:2012-05-15 修回日期:2012-06-11 出版日期:2012-12-01 发布日期:2012-12-01
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z219), the Jiangsu Innovation Program for Graduate Education, China (Grant No. CXZZ11_0206), and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

Zhang Lei (张磊)^a, Shen Hong-Lie (沈鸿烈)^{a b}, Yue Zhi-Hao (岳之浩)^a, Jiang Feng (江丰)^a, Wu Tian-Ru (吴天如)^a, Pan Yuan-Yuan (潘园园)^a

a College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
b Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Received:2012-05-15 Revised:2012-06-11 Online:2012-12-01 Published:2012-12-01
Contact: Shen Hong-Lie E-mail:hlshen@nuaa.edu.cn
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z219), the Jiangsu Innovation Program for Graduate Education, China (Grant No. CXZZ11_0206), and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

摘要/Abstract

摘要： A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.

关键词: layer transfer, silicon thin film heterojunction solar cell, hot-wire chemical vapor deposition, doping concentration

Abstract: A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Key words: layer transfer, silicon thin film heterojunction solar cell, hot-wire chemical vapor deposition, doping concentration

中图分类号: (Insulators)

68.55.aj

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 88.40.jj (Silicon solar cells)

张磊, 沈鸿烈, 岳之浩, 江丰, 吴天如, 潘园园. Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell[J]. Chin. Phys. B, 2013, 22(1): 16803-016803.

Zhang Lei (张磊), Shen Hong-Lie (沈鸿烈), Yue Zhi-Hao (岳之浩), Jiang Feng (江丰), Wu Tian-Ru (吴天如), Pan Yuan-Yuan (潘园园). Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell[J]. Chin. Phys. B, 2013, 22(1): 16803-016803.

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Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

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