Thermoelectric properties of two-dimensional hexagonal indium-VA

doi:10.1088/1674-1056/27/2/026802

中国物理B ›› 2018, Vol. 27 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/27/2/026802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Thermoelectric properties of two-dimensional hexagonal indium-VA

Jing-Yun Bi(毕京云), Li-Hong Han(韩利红), Qian Wang(王倩), Li-Yuan Wu(伍力源), Ruge Quhe(屈贺如歌), Peng-Fei Lu(芦鹏飞)

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2. School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2017-09-06 修回日期:2017-11-04 出版日期:2018-02-05 发布日期:2018-02-05
通讯作者: Ruge Quhe, Peng-Fei Lu E-mail:quheruge@bupt.edu.cn;photon.bupt@gmail.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).

Thermoelectric properties of two-dimensional hexagonal indium-VA

Jing-Yun Bi(毕京云)¹, Li-Hong Han(韩利红)¹, Qian Wang(王倩)¹, Li-Yuan Wu(伍力源)¹, Ruge Quhe(屈贺如歌)^1,2, Peng-Fei Lu(芦鹏飞)^1,3

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2. School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2017-09-06 Revised:2017-11-04 Online:2018-02-05 Published:2018-02-05
Contact: Ruge Quhe, Peng-Fei Lu E-mail:quheruge@bupt.edu.cn;photon.bupt@gmail.com
About author:68.65.-k; 63.22.-m; 73.40.Kp; 84.60.Bk
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).

摘要/Abstract

摘要： The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m^-1·K^-1 (InP), 1.31 W·m^-1·K^-1 (InAs), 0.87 W·m^-1·K^-1 (InSb), and 0.62 W·m^-1 K^-1 (InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials (κ < 2 W·m^-1·K^-1). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature.

关键词: thermoelectric properties, two-dimensional In-VA, figure of merit

Abstract: The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m^-1·K^-1 (InP), 1.31 W·m^-1·K^-1 (InAs), 0.87 W·m^-1·K^-1 (InSb), and 0.62 W·m^-1 K^-1 (InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials (κ < 2 W·m^-1·K^-1). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature.

Key words: thermoelectric properties, two-dimensional In-VA, figure of merit

中图分类号: (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

68.65.-k

63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 84.60.Bk (Performance characteristics of energy conversion systems; figure of merit)

毕京云, 韩利红, 王倩, 伍力源, 屈贺如歌, 芦鹏飞. Thermoelectric properties of two-dimensional hexagonal indium-VA[J]. 中国物理B, 2018, 27(2): 26802-026802.

Jing-Yun Bi(毕京云), Li-Hong Han(韩利红), Qian Wang(王倩), Li-Yuan Wu(伍力源), Ruge Quhe(屈贺如歌), Peng-Fei Lu(芦鹏飞). Thermoelectric properties of two-dimensional hexagonal indium-VA[J]. Chin. Phys. B, 2018, 27(2): 26802-026802.

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