中国物理B ›› 2017, Vol. 26 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/26/9/098503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing

Xiao-Ran Meng(孟骁然), Yun-Xia Ping(平云霞), Wen-Jie Yu(俞文杰), Zhong-Ying Xue(薛忠营), Xing Wei(魏星), Miao Zhang(张苗), Zeng-Feng Di(狄增峰), Bo Zhang(张波), Qing-Tai Zhao(赵清太)   

  1. 1 Shanghai University of Engineering Science, Shanghai 201600, China;
    2 State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    3 Peter Grünberg Institute 9 (PGI 9-IT), and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, Juelich 52425, Germany
  • 收稿日期:2017-03-17 修回日期:2017-05-21 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Yun-Xia Ping, Bo Zhang E-mail:xyping@sues.edu.cn;bozhang@mail.sim.ac.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1418300) and the National Natural Science Foundation of China (Grant Nos. 61604094 and 61306126).

Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing

Xiao-Ran Meng(孟骁然)1,2, Yun-Xia Ping(平云霞)1, Wen-Jie Yu(俞文杰)2, Zhong-Ying Xue(薛忠营)2, Xing Wei(魏星)2, Miao Zhang(张苗)2, Zeng-Feng Di(狄增峰)2, Bo Zhang(张波)2, Qing-Tai Zhao(赵清太)3   

  1. 1 Shanghai University of Engineering Science, Shanghai 201600, China;
    2 State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    3 Peter Grünberg Institute 9 (PGI 9-IT), and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, Juelich 52425, Germany
  • Received:2017-03-17 Revised:2017-05-21 Online:2017-09-05 Published:2017-09-05
  • Contact: Yun-Xia Ping, Bo Zhang E-mail:xyping@sues.edu.cn;bozhang@mail.sim.ac.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1418300) and the National Natural Science Foundation of China (Grant Nos. 61604094 and 61306126).

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摘要： Solid reactions between Ni and relaxed Si0.7Ge0.3 substrate were systematically investigated with different Al interlayer thicknesses. The morphology, composition, and micro-structure of the Ni germanosilicide layers were analyzed with different annealing temperatures in the appearance of Al. The germanosilicide layers were characterized by Rutherford backscattering spectrometry, cross-section transmission electron microscopy, scan transmission electron microscopy, and secondary ion mass spectroscopy. It was shown that the incorporation of Al improved the surface and interface morphology of the germanosilicide layers, enhanced the thermal stabilities, and retarded the Ni-rich germanosilicide phase to mono germanosilicide phase. With increasing annealing temperature, Al atoms distributed from the Ni/Si0.7Ge0.3 interface to the total layer of Ni2Si0.7Ge0.3, and finally accumulated at the surface of NiSi0.7Ge0.3. We found that under the assistance of Al atoms, the best quality Ni germanosilicide layer was achieved by annealing at 700 ℃ in the case of 3 nm Al.

关键词: germanosilicide, Al, Ni

Abstract: Solid reactions between Ni and relaxed Si0.7Ge0.3 substrate were systematically investigated with different Al interlayer thicknesses. The morphology, composition, and micro-structure of the Ni germanosilicide layers were analyzed with different annealing temperatures in the appearance of Al. The germanosilicide layers were characterized by Rutherford backscattering spectrometry, cross-section transmission electron microscopy, scan transmission electron microscopy, and secondary ion mass spectroscopy. It was shown that the incorporation of Al improved the surface and interface morphology of the germanosilicide layers, enhanced the thermal stabilities, and retarded the Ni-rich germanosilicide phase to mono germanosilicide phase. With increasing annealing temperature, Al atoms distributed from the Ni/Si0.7Ge0.3 interface to the total layer of Ni2Si0.7Ge0.3, and finally accumulated at the surface of NiSi0.7Ge0.3. We found that under the assistance of Al atoms, the best quality Ni germanosilicide layer was achieved by annealing at 700 ℃ in the case of 3 nm Al.

Key words: germanosilicide, Al, Ni

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices)