中国物理B ›› 2017, Vol. 26 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/26/9/098502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲)   

  1. Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering, East China Normal University, Shanghai 200241, China
  • 收稿日期:2017-03-23 修回日期:2017-06-02 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Xiao-Jin Li, Jin-Zhong Zhang E-mail:xjli@ee.ecnu.edu.cn;jzzhang@ee.ecnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Funds of China (Grant Nos. 61574056 and 61504156), the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1412000), Shanghai Sailing Program, China (Grant No. 17YF1404700), and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 14DZ2260800).

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲)   

  1. Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering, East China Normal University, Shanghai 200241, China
  • Received:2017-03-23 Revised:2017-06-02 Online:2017-09-05 Published:2017-09-05
  • Contact: Xiao-Jin Li, Jin-Zhong Zhang E-mail:xjli@ee.ecnu.edu.cn;jzzhang@ee.ecnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Funds of China (Grant Nos. 61574056 and 61504156), the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1412000), Shanghai Sailing Program, China (Grant No. 17YF1404700), and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 14DZ2260800).

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摘要： In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.

关键词: SiGe heterojunction bipolar transistors (HBT), small-signal equivalent circuit, distributed effects, CBE layout

Abstract: In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.

Key words: SiGe heterojunction bipolar transistors (HBT), small-signal equivalent circuit, distributed effects, CBE layout

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Pq (Bipolar transistors) 85.40.Bh (Computer-aided design of microcircuits; layout and modeling)