中国物理B ›› 2017, Vol. 26 ›› Issue (8): 85202-085202.doi: 10.1088/1674-1056/26/8/085202

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Surface plasmon-enhanced dual-band infrared absorber for VOx-based microbolometer application

Qi Li(李琦), Bing-qiang Yu(于兵强), Zhao-feng Li(李兆峰), Xiao-feng Wang(王晓峰), Zi-chen Zhang(张紫辰), Ling-feng Pan(潘岭峰)   

  1. 1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
    2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    5 Tsinghua University, Beijing 100084, China;
    6 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-03-15 修回日期:2017-05-09 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Zhao-feng Li, Xiao-feng Wang E-mail:lizhaofeng@semi.ac.cn;wangxiaofeng@ime.ac.cn

Surface plasmon-enhanced dual-band infrared absorber for VOx-based microbolometer application

Qi Li(李琦)1, Bing-qiang Yu(于兵强)1, Zhao-feng Li(李兆峰)2,6, Xiao-feng Wang(王晓峰)3,4, Zi-chen Zhang(张紫辰)4,5, Ling-feng Pan(潘岭峰)3,4   

  1. 1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
    2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    5 Tsinghua University, Beijing 100084, China;
    6 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-03-15 Revised:2017-05-09 Online:2017-08-05 Published:2017-08-05
  • Contact: Zhao-feng Li, Xiao-feng Wang E-mail:lizhaofeng@semi.ac.cn;wangxiaofeng@ime.ac.cn
  • About author:0.1088/1674-1056/26/8/

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摘要：

We propose a periodic structure as an extra absorption layer (i.e., absorber) based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared (MWIR) and long wavelength infrared (LWIR) regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO2/SiN sandwich-structure. We employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μ and λ =9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved.

关键词: surface plasmon resonance effects, dual-band absorption, vanadium oxide, uncooled infrared detector

Abstract:

We propose a periodic structure as an extra absorption layer (i.e., absorber) based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared (MWIR) and long wavelength infrared (LWIR) regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO2/SiN sandwich-structure. We employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μ and λ =9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved.

Key words: surface plasmon resonance effects, dual-band absorption, vanadium oxide, uncooled infrared detector

中图分类号:  (Plasma-material interactions; boundary layer effects)

  • 52.40.Hf
79.20.Ws (Multiphoton absorption) 71.30.+h (Metal-insulator transitions and other electronic transitions) 85.60.Gz (Photodetectors (including infrared and CCD detectors))