Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

doi:10.1088/1674-1056/26/6/067301

中国物理B ›› 2017, Vol. 26 ›› Issue (6): 67301-067301.doi: 10.1088/1674-1056/26/6/067301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰)

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology(NCNST), Beijing 100083, China

收稿日期:2017-04-07 修回日期:2017-04-10 出版日期:2017-06-05 发布日期:2017-06-05
通讯作者: Cao-Feng Pan E-mail:cfpan@binn.cas.cn

Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰)

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology(NCNST), Beijing 100083, China

Received:2017-04-07 Revised:2017-04-10 Online:2017-06-05 Published:2017-06-05
Contact: Cao-Feng Pan E-mail:cfpan@binn.cas.cn

摘要/Abstract

摘要：

Flexible electrically pumped random laser (RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate (ITO/PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence (PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects. In order to achieve electrically pumped random lasing with a lower threshold, the metal-insulator-semiconductor (MIS) structure of Au/SiO₂/ZnO on ITO/PET substrate is fabricated by low temperature process. With sufficient forward bias, the as-fabricated flexible device exhibits random lasing, and a low threshold current of ~11.5 mA and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.

关键词: flexible, random laser, ZnO nanowires, MIS structure

Abstract:

Key words: flexible, random laser, ZnO nanowires, MIS structure

中图分类号: (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))

73.20.Mf

78.67.Uh (Nanowires) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

阙妙玲, 王贤迪, 彭轶瑶, 潘曹峰. Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure[J]. 中国物理B, 2017, 26(6): 67301-067301.

Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰). Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure[J]. Chin. Phys. B, 2017, 26(6): 67301-067301.

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Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

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