Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

doi:10.1088/1674-1056/26/4/047303

中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47303-047303.doi: 10.1088/1674-1056/26/4/047303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2016-11-03 修回日期:2017-01-09 出版日期:2017-04-05 发布日期:2017-04-05
通讯作者: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2014CB643903, 2013CB932904, 2012CB932701, and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61274013, U1037602, 61306013, and 61290303), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200), and China Postdoctoral Science Foundation (Grant No. 2014M561029).

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

Hong-Yue Hao(郝宏玥)^1,2, Wei Xiang(向伟)^1,2, Guo-Wei Wang(王国伟)^1,2, Ying-Qiang Xu(徐应强)^1,2, Xi Han(韩玺)^1,2, Yao-Yao Sun(孙瑶耀)^1,2, Dong-Wei Jiang(蒋洞微)^1,2, Yu Zhang(张宇)^1,2, Yong-Ping Liao(廖永平)^1,2, Si-Hang Wei(魏思航)^1,2, Zhi-Chuan Niu(牛智川)^1,2

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

Received:2016-11-03 Revised:2017-01-09 Online:2017-04-05 Published:2017-04-05
Contact: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2014CB643903, 2013CB932904, 2012CB932701, and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61274013, U1037602, 61306013, and 61290303), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200), and China Postdoctoral Science Foundation (Grant No. 2014M561029).

摘要/Abstract

摘要： In this paper we focused on the mask technology of inductively coupled plasma (ICP) etching for the mesa fabrication of infrared focal plane arrays (FPA). By using the SiO₂ mask, the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls. Comparing the IV characterization of detectors by using two different masks, the detector using the SiO₂ hard mask has the R₀A of 9.7×10⁶ Ω·cm², while the detector using the photoresist mask has the R₀A of 3.2×10² Ω·cm² in 77 K. After that we focused on the method of removing the remaining SiO₂ after mesa etching. The dry ICP etching and chemical buffer oxide etcher (BOE) based on HF and NH₄F are used in this part. Detectors using BOE only have closer R₀A to that using the combining method, but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE. We finally choose the combining method and fabricated the 640×512 FPA. The FPA with cutoff wavelength of 4.8 μm has the average R₀A of 6.13×10⁹ Ω·cm² and the average detectivity of 4.51×10⁹ cm·Hz^1/2·W^-1 at 77 K. The FPA has good uniformity with the bad dots rate of 1.21% and the noise equivalent temperature difference (NEDT) of 22.9 mK operating at 77 K.

关键词: InAs/GaSb superlattices, etching mask, mid-wavelength infared, focal plane arrays

Abstract: In this paper we focused on the mask technology of inductively coupled plasma (ICP) etching for the mesa fabrication of infrared focal plane arrays (FPA). By using the SiO₂ mask, the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls. Comparing the IV characterization of detectors by using two different masks, the detector using the SiO₂ hard mask has the R₀A of 9.7×10⁶ Ω·cm², while the detector using the photoresist mask has the R₀A of 3.2×10² Ω·cm² in 77 K. After that we focused on the method of removing the remaining SiO₂ after mesa etching. The dry ICP etching and chemical buffer oxide etcher (BOE) based on HF and NH₄F are used in this part. Detectors using BOE only have closer R₀A to that using the combining method, but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE. We finally choose the combining method and fabricated the 640×512 FPA. The FPA with cutoff wavelength of 4.8 μm has the average R₀A of 6.13×10⁹ Ω·cm² and the average detectivity of 4.51×10⁹ cm·Hz^1/2·W^-1 at 77 K. The FPA has good uniformity with the bad dots rate of 1.21% and the noise equivalent temperature difference (NEDT) of 22.9 mK operating at 77 K.

Key words: InAs/GaSb superlattices, etching mask, mid-wavelength infared, focal plane arrays

中图分类号: (Superlattices)

73.21.Cd

73.61.Ey (III-V semiconductors) 52.77.Bn (Etching and cleaning)

郝宏玥, 向伟, 王国伟, 徐应强, 韩玺, 孙瑶耀, 蒋洞微, 张宇, 廖永平, 魏思航, 牛智川. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array[J]. 中国物理B, 2017, 26(4): 47303-047303.

Hong-Yue Hao(郝宏玥), Wei Xiang(向伟), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Xi Han(韩玺), Yao-Yao Sun(孙瑶耀), Dong-Wei Jiang(蒋洞微), Yu Zhang(张宇), Yong-Ping Liao(廖永平), Si-Hang Wei(魏思航), Zhi-Chuan Niu(牛智川). Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array[J]. Chin. Phys. B, 2017, 26(4): 47303-047303.

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Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

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