N-type GaSb single crystals with high below-band gap transmission

doi:10.1088/1674-1056/26/10/107801

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 107801-107801.doi: 10.1088/1674-1056/26/10/107801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

N-type GaSb single crystals with high below-band gap transmission

1. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. College of Materials Science and Opto-electronic Technology, Univeristy of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2017-03-08 修回日期:2017-06-14 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: You-Wen Zhao E-mail:zhaoyw@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

N-type GaSb single crystals with high below-band gap transmission

Yong-Biao Bai(白永彪)^1,2, You-Wen Zhao(赵有文)^1,2, Gui-Ying Shen(沈桂英)^1,2, Xiao-Yu Chen(陈晓玉)^1,2, Jing-Ming Liu(刘京明)¹, Hui Xie(谢晖)¹, Zhi-Yuan Dong(董志远)¹, Jun Yang(杨俊)¹, Feng-Yun Yang(杨凤云)¹, Feng-Hua Wang(王凤华)¹

1. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. College of Materials Science and Opto-electronic Technology, Univeristy of Chinese Academy of Sciences, Beijing 100049, China

Received:2017-03-08 Revised:2017-06-14 Online:2017-10-05 Published:2017-10-05
Contact: You-Wen Zhao E-mail:zhaoyw@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

摘要/Abstract

摘要：

Te-doped GaSb single crystals are studied by measuring Hall effect, infrared (IR) transmission and photoluminescence (PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.

关键词: Te-doped GaSb, infrared transmission, native defects, PL

Abstract:

Key words: Te-doped GaSb, infrared transmission, native defects, PL

中图分类号: (III-V semiconductors)

78.55.Cr

78.30.-j (Infrared and Raman spectra) 78.55.-m (Photoluminescence, properties and materials)

白永彪, 赵有文, 沈桂英, 陈晓玉, 刘京明, 谢晖, 董志远, 杨俊, 杨凤云, 王凤华. N-type GaSb single crystals with high below-band gap transmission[J]. 中国物理B, 2017, 26(10): 107801-107801.

Yong-Biao Bai(白永彪), You-Wen Zhao(赵有文), Gui-Ying Shen(沈桂英), Xiao-Yu Chen(陈晓玉), Jing-Ming Liu(刘京明), Hui Xie(谢晖), Zhi-Yuan Dong(董志远), Jun Yang(杨俊), Feng-Yun Yang(杨凤云), Feng-Hua Wang(王凤华). N-type GaSb single crystals with high below-band gap transmission[J]. Chin. Phys. B, 2017, 26(10): 107801-107801.

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N-type GaSb single crystals with high below-band gap transmission

N-type GaSb single crystals with high below-band gap transmission

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