中国物理B ›› 2017, Vol. 26 ›› Issue (1): 17203-017203.doi: 10.1088/1674-1056/26/1/017203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Spin-valley Hall conductivity of doped ferromagnetic silicene under strain

Bahram Shirzadi, Mohsen Yarmohammadi   

  1. 1. Department of Physics, Razi University, Kermanshah, Iran;
    2. Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran
  • 收稿日期:2016-09-08 修回日期:2016-09-28 出版日期:2017-01-05 发布日期:2017-01-05
  • 通讯作者: Mohsen Yarmohammadi E-mail:m.yarmohammadi69@gmail.com

Spin-valley Hall conductivity of doped ferromagnetic silicene under strain

Bahram Shirzadi1, Mohsen Yarmohammadi2   

  1. 1. Department of Physics, Razi University, Kermanshah, Iran;
    2. Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran
  • Received:2016-09-08 Revised:2016-09-28 Online:2017-01-05 Published:2017-01-05
  • Contact: Mohsen Yarmohammadi E-mail:m.yarmohammadi69@gmail.com

摘要:

The spin-valley Hall conductivity (SHC-VHC) of two-dimensional material ferromagnetic graphene's silicon analog, silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane-Mele Hamiltonian. The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair (AC) direction. In particular, we study the effect of external static electric field on these conductivities under the strain. In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently. Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC (VHC) decreases (increases) for strains smaller than this value symmetrically while it increases (decreases) for strains larger than one.

关键词: ferromagnetic silicene, Kubo formalism, strain, spin-valley conductivity

Abstract:

The spin-valley Hall conductivity (SHC-VHC) of two-dimensional material ferromagnetic graphene's silicon analog, silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane-Mele Hamiltonian. The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair (AC) direction. In particular, we study the effect of external static electric field on these conductivities under the strain. In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently. Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC (VHC) decreases (increases) for strains smaller than this value symmetrically while it increases (decreases) for strains larger than one.

Key words: ferromagnetic silicene, Kubo formalism, strain, spin-valley conductivity

中图分类号:  (Spin polarized transport in semiconductors)

  • 72.25.Dc
77.80.bn (Strain and interface effects) 77.80.bn (Strain and interface effects) 77.80.B- (Phase transitions and Curie point)