中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87308-087308.doi: 10.1088/1674-1056/25/8/087308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Jia-Qi Zhang(张家琦), Lei Wang(王磊), Liu-An Li(李柳暗), Qing-Peng Wang(王青鹏), Ying Jiang(江滢), Hui-Chao Zhu(朱慧超), Jin-Ping Ao(敖金平)   

  1. 1 Institute of Technology and Science, Tokushima University, Tokushima, 770-8506, Japan;
    2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, China;
    3 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2016-02-26 修回日期:2016-04-16 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Jin-Ping Ao E-mail:jpao@ee.tokushima-u.ac.jp

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Jia-Qi Zhang(张家琦)1,2, Lei Wang(王磊)1, Liu-An Li(李柳暗)3, Qing-Peng Wang(王青鹏)1,2, Ying Jiang(江滢)1,2, Hui-Chao Zhu(朱慧超)2, Jin-Ping Ao(敖金平)1   

  1. 1 Institute of Technology and Science, Tokushima University, Tokushima, 770-8506, Japan;
    2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, China;
    3 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2016-02-26 Revised:2016-04-16 Online:2016-08-05 Published:2016-08-05
  • Contact: Jin-Ping Ao E-mail:jpao@ee.tokushima-u.ac.jp

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摘要： Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95℃. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575℃ in N2 ambient for 1 min. The TiN gate leakage current is only 10-8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased.

关键词: AlGaN/GaN HFETs, wet etching, self-aligned-gate

Abstract: Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95℃. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575℃ in N2 ambient for 1 min. The TiN gate leakage current is only 10-8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased.

Key words: AlGaN/GaN HFETs, wet etching, self-aligned-gate

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
52.77.Bn (Etching and cleaning) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))