Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

doi:10.1088/1674-1056/25/2/027304

中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27304-027304.doi: 10.1088/1674-1056/25/2/027304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction

Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾)

School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China

收稿日期:2015-09-17 修回日期:2015-11-16 出版日期:2016-02-05 发布日期:2016-02-05
通讯作者: Gui-fang Li E-mail:gfli@nwpu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction

Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾)

School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China

Received:2015-09-17 Revised:2015-11-16 Online:2016-02-05 Published:2016-02-05
Contact: Gui-fang Li E-mail:gfli@nwpu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

摘要/Abstract

摘要： We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co₂MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co₂MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.

关键词: Co₂MnSi/graphene/n-Ge junction, Fermi-level depinning, Schottky barrier height, metal-induced gap states (MIGS)

Abstract: We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co₂MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co₂MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.

Key words: Co₂MnSi/graphene/n-Ge junction, Fermi-level depinning, Schottky barrier height, metal-induced gap states (MIGS)

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.30.+y (Surface double layers, Schottky barriers, and work functions) 72.25.Dc (Spin polarized transport in semiconductors)

李桂芳, 胡晶, 吕辉, 崔智军, 候晓伟, 刘诗斌, 杜永乾. Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction[J]. 中国物理B, 2016, 25(2): 27304-027304.

Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾). Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction[J]. Chin. Phys. B, 2016, 25(2): 27304-027304.

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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction

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