中国物理B ›› 2016, Vol. 25 ›› Issue (12): 127301-127301.doi: 10.1088/1674-1056/25/12/127301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

Xiao-Jie Jia(贾晓洁), Chun-Lan Zhou(周春兰), Jun-Jie Zhu(朱俊杰), Su Zhou(周肃), Wen-Jing Wang(王文静)   

  1. 1. The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
    2. Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway
  • 收稿日期:2016-07-26 修回日期:2016-08-31 出版日期:2016-12-05 发布日期:2016-12-05
  • 通讯作者: Chun-Lan Zhou E-mail:zhouchl@mail.iee.ac.cn
  • 基金资助:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

Xiao-Jie Jia(贾晓洁)1, Chun-Lan Zhou(周春兰)1, Jun-Jie Zhu(朱俊杰)2, Su Zhou(周肃)1, Wen-Jing Wang(王文静)1   

  1. 1. The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
    2. Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway
  • Received:2016-07-26 Revised:2016-08-31 Online:2016-12-05 Published:2016-12-05
  • Contact: Chun-Lan Zhou E-mail:zhouchl@mail.iee.ac.cn
  • Supported by:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

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摘要：

It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it.

关键词: solar cell, interface, passivation

Abstract:

It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it.

Key words: solar cell, interface, passivation

中图分类号:  (Surface states, band structure, electron density of states)

  • 73.20.At
81.65.Rv (Passivation)