Disorder effects in topological states: Brief review of the recent developments

doi:10.1088/1674-1056/25/11/117311

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117311-117311.doi: 10.1088/1674-1056/25/11/117311

所属专题： TOPICAL REVIEW — Topological electronic states

• TOPICAL REVIEW—Topological electronic states • 上一篇下一篇

Disorder effects in topological states: Brief review of the recent developments

Binglan Wu(吴冰兰), Juntao Song(宋俊涛), Jiaojiao Zhou(周娇娇), Hua Jiang(江华)

1 College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, China;
2 Department of Physics, Hebei Normal University, Hebei 050024, China

收稿日期:2016-04-29 修回日期:2016-06-02 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Hua Jiang E-mail:jianghuaphy@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11374219, 11474085, and 11534001) and the Natural Science Foundation of Jiangsu Province, China (Grant No BK20160007).

Disorder effects in topological states: Brief review of the recent developments

Binglan Wu(吴冰兰)¹, Juntao Song(宋俊涛)², Jiaojiao Zhou(周娇娇)¹, Hua Jiang(江华)¹

1 College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, China;
2 Department of Physics, Hebei Normal University, Hebei 050024, China

Received:2016-04-29 Revised:2016-06-02 Online:2016-11-05 Published:2016-11-05
Contact: Hua Jiang E-mail:jianghuaphy@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11374219, 11474085, and 11534001) and the Natural Science Foundation of Jiangsu Province, China (Grant No BK20160007).

摘要/Abstract

摘要：

Disorder inevitably exists in realistic samples, manifesting itself in various exotic properties for the topological states. In this paper, we summarize and briefly review the work completed over the last few years, including our own, regarding recent developments in several topics about disorder effects in topological states. For weak disorder, the robustness of topological states is demonstrated, especially for both quantum spin Hall states with Z₂=1 and size induced nontrivial topological insulators with Z₂=0. For moderate disorder, by increasing the randomness of both the impurity distribution and the impurity induced potential, the topological insulator states can be created from normal metallic or insulating states. These phenomena and their mechanisms are summarized. For strong disorder, the disorder causes a metal-insulator transition. Due to their topological nature, the phase diagrams are much richer in topological state systems. Finally, the trends in these areas of disorder research are discussed.

关键词: topological states, disorder effects, topological Anderson insulator, metal-insulator transition

Abstract:

Key words: topological states, disorder effects, topological Anderson insulator, metal-insulator transition

中图分类号: (Electrical properties of specific thin films)

73.61.-r

71.23.-k (Electronic structure of disordered solids) 73.43.-f (Quantum Hall effects)

吴冰兰, 宋俊涛, 周娇娇, 江华. Disorder effects in topological states: Brief review of the recent developments[J]. 中国物理B, 2016, 25(11): 117311-117311.

Binglan Wu(吴冰兰), Juntao Song(宋俊涛), Jiaojiao Zhou(周娇娇), Hua Jiang(江华). Disorder effects in topological states: Brief review of the recent developments[J]. Chin. Phys. B, 2016, 25(11): 117311-117311.

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Disorder effects in topological states: Brief review of the recent developments

Disorder effects in topological states: Brief review of the recent developments

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