中国物理B ›› 2016, Vol. 25 ›› Issue (10): 106803-106803.doi: 10.1088/1674-1056/25/10/106803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial

Ran Jiang(蒋然), Zheng-Ran Wu(吴正冉), Zu-Yin Han(韩祖银), Hyung-Suk Jung   

  1. 1 Physical School, Shandong University, Jinan 250100, China;
    2 Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea
  • 收稿日期:2016-05-28 修回日期:2016-06-24 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Ran Jiang E-mail:jiangran@sdu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial

Ran Jiang(蒋然)1, Zheng-Ran Wu(吴正冉)2, Zu-Yin Han(韩祖银)3, Hyung-Suk Jung2   

  1. 1 Physical School, Shandong University, Jinan 250100, China;
    2 Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea
  • Received:2016-05-28 Revised:2016-06-24 Online:2016-10-05 Published:2016-10-05
  • Contact: Ran Jiang E-mail:jiangran@sdu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

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摘要：

Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology.

关键词: modulation, Hafnium oxide, graphene

Abstract:

Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology.

Key words: modulation, Hafnium oxide, graphene

中图分类号:  (Graphene films)

  • 68.65.Pq
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 84.40.Lj (Microwave integrated electronics)