中国物理B ›› 2016, Vol. 25 ›› Issue (1): 17201-017201.doi: 10.1088/1674-1056/25/1/017201
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
X Z Liu(刘兴钊), C Yue(岳超), C T Xia(夏长泰), W L Zhang(张万里)
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
X Z Liu(刘兴钊)1, C Yue(岳超)1, C T Xia(夏长泰)2, W L Zhang(张万里)1
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
摘要： High-resistivity β -Ga2O3 thin films were grown on Si-doped n-type conductive β -Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 106 Ω . The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4× 1018 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7× 102% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β -Ga2O3 thin films and the n-type conductive β -Ga2O3 single-crystal substrate.
中图分类号: (Conductivity phenomena in semiconductors and insulators)
- 72.20.-i