Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors

doi:10.1088/1674-1056/24/9/098103

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 98103-098103.doi: 10.1088/1674-1056/24/9/098103

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Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors

包蓓^{a b}, 邵宪一^c, 谭璐^{a b}, 王文河^{a b}, 吴越珅^{a b}, 文理斌^{a b}, 赵家庆^c, 唐伟^c, 张为民^d, 郭小军^c, 王顺^{a b}, 刘荧^{a b e}

a Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
c Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
d College of Chemistry and Chemical Engineering, Guangxi University for Nationalities, Nanning 530006, China;
e Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA

收稿日期:2015-07-22 修回日期:2015-08-03 出版日期:2015-09-05 发布日期:2015-09-05
基金资助:
Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 13ZR1456800), Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20120073110093), the National Natural Science Foundation of China (Grant Nos. 11274229, 11474198, 61274083, 61334008, 11274229, 11474198, 11204175), and DOE under DE-FG02-04ER46159.

Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors

Bao Bei (包蓓)^{a b}, Shao Xian-Yi (邵宪一)^c, Tan Lu (谭璐)^{a b}, Wang Wen-He (王文河)^{a b}, Wu Yue-Shen (吴越珅)^{a b}, Wen Li-Bin (文理斌)^{a b}, Zhao Jia-Qing (赵家庆)^c, Tang Wei (唐伟)^c, Zhang Wei-Min (张为民)^d, Guo Xiao-Jun (郭小军)^c, Wang Shun (王顺)^{a b}, Liu Ying (刘荧)^{a b e}

a Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
c Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
d College of Chemistry and Chemical Engineering, Guangxi University for Nationalities, Nanning 530006, China;
e Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA

Received:2015-07-22 Revised:2015-08-03 Online:2015-09-05 Published:2015-09-05
Contact: Guo Xiao-Jun, Wang Shun, Liu Ying E-mail:x.guo@sjtu.edu.cn;shunwang@sjtu.edu.cn;yingl@sjtu.edu.cn
Supported by:
Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 13ZR1456800), Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20120073110093), the National Natural Science Foundation of China (Grant Nos. 11274229, 11474198, 61274083, 61334008, 11274229, 11474198, 11204175), and DOE under DE-FG02-04ER46159.

摘要/Abstract

摘要： Indacenodithiophene-co-benzothiadiazole (IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10²¹ cm^-3. While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm²·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.

关键词: semiconducting polymer, ion gel gating charge transport, variable range hopping

Abstract: Indacenodithiophene-co-benzothiadiazole (IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10²¹ cm^-3. While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm²·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.

Key words: semiconducting polymer, ion gel gating charge transport, variable range hopping

中图分类号: (Organic semiconductors)

81.05.Fb

72.20.Ee (Mobility edges; hopping transport) 72.80.Le (Polymers; organic compounds (including organic semiconductors))

包蓓, 邵宪一, 谭璐, 王文河, 吴越珅, 文理斌, 赵家庆, 唐伟, 张为民, 郭小军, 王顺, 刘荧. Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors[J]. 中国物理B, 2015, 24(9): 98103-098103.

Bao Bei (包蓓), Shao Xian-Yi (邵宪一), Tan Lu (谭璐), Wang Wen-He (王文河), Wu Yue-Shen (吴越珅), Wen Li-Bin (文理斌), Zhao Jia-Qing (赵家庆), Tang Wei (唐伟), Zhang Wei-Min (张为民), Guo Xiao-Jun (郭小军), Wang Shun (王顺), Liu Ying (刘荧). Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors[J]. Chin. Phys. B, 2015, 24(9): 98103-098103.

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Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors

Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors

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