中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68104-068104.doi: 10.1088/1674-1056/24/6/068104
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
王涛a, 于贺a, 顾德恩a, 郭睿a, 董翔a, 蒋亚东a, 胡锐麟b
Wang Tao (王涛)a, Yu He (于贺)a, Gu De-En (顾德恩)a, Guo Rui (郭睿)a, Dong Xiang (董翔)a, Jiang Ya-Dong (蒋亚东)a, Hu Rui-Lin (胡锐麟)b
摘要: In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.
中图分类号: (Deposition by sputtering)