中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68104-068104.doi: 10.1088/1674-1056/24/6/068104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Modeling the reactive sputter deposition of Ti-doped VOx thin films

王涛a, 于贺a, 顾德恩a, 郭睿a, 董翔a, 蒋亚东a, 胡锐麟b   

  1. a School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
    b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL, 61801, USA
  • 收稿日期:2014-10-22 修回日期:2014-12-18 出版日期:2015-06-05 发布日期:2015-06-05
  • 基金资助:
    Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61405027, 61421002, and 61235006) and the Postdoctoral Science Foundation of China (Grant No. 2014M562296).

Modeling the reactive sputter deposition of Ti-doped VOx thin films

Wang Tao (王涛)a, Yu He (于贺)a, Gu De-En (顾德恩)a, Guo Rui (郭睿)a, Dong Xiang (董翔)a, Jiang Ya-Dong (蒋亚东)a, Hu Rui-Lin (胡锐麟)b   

  1. a School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
    b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL, 61801, USA
  • Received:2014-10-22 Revised:2014-12-18 Online:2015-06-05 Published:2015-06-05
  • Contact: Yu He E-mail:yuhe@uestc.edu.cn
  • About author:81.15.Cd; 85.40.Sz
  • Supported by:
    Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61405027, 61421002, and 61235006) and the Postdoctoral Science Foundation of China (Grant No. 2014M562296).

RichHTML

0

PDF (PC)

247

赞

摘要： In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.

关键词: Ti-doped, VOx, EDX

Abstract: In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.

Key words: Ti-doped, VOx, EDX

中图分类号:  (Deposition by sputtering)

  • 81.15.Cd
85.40.Sz (Deposition technology)