›› 2015, Vol. 24 ›› Issue (1): 18502-018502.doi: 10.1088/1674-1056/24/1/018502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

李慧, 尚艳霞, 张早娣, 王泽松, 张瑞, 付德君   

  1. School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education, Wuhan University, Wuhan 430072, China
  • 收稿日期:2014-05-05 修回日期:2014-08-26 出版日期:2015-01-05 发布日期:2015-01-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11375135) and the State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, China (Grant No. AWJ-M13-03).

Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

Li Hui (李慧), Shang Yan-Xia (尚艳霞), Zhang Zao-Di (张早娣), Wang Ze-Song (王泽松), Zhang Rui (张瑞), Fu De-Jun (付德君)   

  1. School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education, Wuhan University, Wuhan 430072, China
  • Received:2014-05-05 Revised:2014-08-26 Online:2015-01-05 Published:2015-01-05
  • Contact: Fu De-Jun E-mail:djfu@whu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11375135) and the State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, China (Grant No. AWJ-M13-03).

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摘要： We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions, followed by annealing at 950 ℃ in vacuum. Raman spectroscopy reveals IG/I2D values varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis.

关键词: ion implantation, carbon clusters, graphene, copper foil

Abstract: We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions, followed by annealing at 950 ℃ in vacuum. Raman spectroscopy reveals IG/I2D values varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis.

Key words: ion implantation, carbon clusters, graphene, copper foil

中图分类号:  (Impurity doping, diffusion and ion implantation technology)

  • 85.40.Ry
68.65.Pq (Graphene films) 78.30.-j (Infrared and Raman spectra)