A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

doi:10.1088/1674-1056/23/8/087305

›› 2014, Vol. 23 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/23/8/087305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

毛维^a, 佘伟波^a, 杨翠^b, 张超^a, 张进成^a, 马晓华^b, 张金风^a, 刘红侠^a, 杨林安^a, 张凯^a, 赵胜雷^a, 陈永和^a, 郑雪峰^a, 郝跃^a

a Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

收稿日期:2013-10-08 修回日期:2013-11-24 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085 and 61334002) and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013).

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Mao Wei (毛维)^a, She Wei-Bo (佘伟波)^a, Yang Cui (杨翠)^b, Zhang Chao (张超)^a, Zhang Jin-Cheng (张进成)^a, Ma Xiao-Hua (马晓华)^b, Zhang Jin-Feng (张金风)^a, Liu Hong-Xia (刘红侠)^a, Yang Lin-An (杨林安)^a, Zhang Kai (张凯)^a, Zhao Sheng-Lei (赵胜雷)^a, Chen Yong-He (陈永和)^a, Zheng Xue-Feng (郑雪峰)^a, Hao Yue (郝跃)^a

a Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

Received:2013-10-08 Revised:2013-11-24 Online:2014-08-15 Published:2014-08-15
Contact: Mao Wei E-mail:mwxidian@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085 and 61334002) and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013).

摘要/Abstract

摘要： In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.

关键词: analytical model of GaN-based field-plated HEMT, polarization effect, potential, electric field

Abstract: In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.

Key words: analytical model of GaN-based field-plated HEMT, polarization effect, potential, electric field

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

毛维, 佘伟波, 杨翠, 张超, 张进成, 马晓华, 张金风, 刘红侠, 杨林安, 张凯, 赵胜雷, 陈永和, 郑雪峰, 郝跃. A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor[J]. , 2014, 23(8): 87305-087305.

Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃). A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor[J]. Chin. Phys. B, 2014, 23(8): 87305-087305.

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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

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