中国物理B ›› 2014, Vol. 23 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/23/6/067701

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Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application

林猛, 安霞, 黎明, 云全新, 李敏, 李志强, 刘朋强, 张兴, 黄如   

  1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2013-10-06 修回日期:2013-12-16 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601) and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application

Lin Meng (林猛), An Xia (安霞), Li Ming (黎明), Yun Quan-Xin (云全新), Li Min (李敏), Li Zhi-Qiang (李志强), Liu Peng-Qiang (刘朋强), Zhang Xing (张兴), Huang Ru (黄如)   

  1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2013-10-06 Revised:2013-12-16 Online:2014-06-15 Published:2014-06-15
  • Contact: An Xia, Yun Quan-Xin, Huang Ru E-mail:anxia@ime.pku.edu.cn;liming.ime@pku.edu.cn;ruhuang@pku.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601) and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

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摘要： In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N2O plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N2O plasma passivation is about ～ 3×1011 cm-2·eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor (MOS) capacitor with Al2O3 serving as gate dielectric is reduced to ～ 50 mV, compared with ～ 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.

关键词: Ge, GeO2 passivation, N2O plasma oxidation, Ge NMOSFETs

Abstract: In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N2O plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N2O plasma passivation is about ～ 3×1011 cm-2·eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor (MOS) capacitor with Al2O3 serving as gate dielectric is reduced to ～ 50 mV, compared with ～ 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.

Key words: Ge, GeO2 passivation, N2O plasma oxidation, Ge NMOSFETs

中图分类号: 

  • 77.55.D-
77.55.df (For silicon electronics) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))