中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38507-038507.doi: 10.1088/1674-1056/23/3/038507
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
李冲, 薛春来, 刘智, 成步文, 王启明
Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明)
摘要: We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30-μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SOI substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36 μA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 μm is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.
中图分类号: (Photodetectors (including infrared and CCD detectors))